Schottky diodes on ZnIn2S4 single crystals

O. Vigil; S. Lopez; E. Morris; O. Calzadilla; F. Leccabue

doi:10.1016/0165-1633(87)90080-3

Schottky diodes on ZnIn₂S₄ single crystals

O. Vigil, S. Lopez, E. Morris, O. Calzadilla, F. Leccabue

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Schottky diodes have been prepared on ZnIn₂S₄ single crystal ternary compounds using Au as the barrier contact. Compared with theoretical models, these diodes show majority carrier tunnel and interface state effects. The influence of chemical etching on the electrical properties is also reported.

Original language	English
Pages (from-to)	315-318
Number of pages	4
Journal	Solar Energy Materials
Volume	16
Issue number	4
DOIs	https://doi.org/10.1016/0165-1633(87)90080-3
State	Published - Oct 1987
Externally published	Yes

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title = "Schottky diodes on ZnIn2S4 single crystals",

abstract = "Schottky diodes have been prepared on ZnIn2S4 single crystal ternary compounds using Au as the barrier contact. Compared with theoretical models, these diodes show majority carrier tunnel and interface state effects. The influence of chemical etching on the electrical properties is also reported.",

author = "O. Vigil and S. Lopez and E. Morris and O. Calzadilla and F. Leccabue",

year = "1987",

month = oct,

doi = "10.1016/0165-1633(87)90080-3",

language = "Ingl{\'e}s",

volume = "16",

pages = "315--318",

journal = "Solar Energy Materials",

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T1 - Schottky diodes on ZnIn2S4 single crystals

AU - Vigil, O.

AU - Lopez, S.

AU - Morris, E.

AU - Calzadilla, O.

AU - Leccabue, F.

PY - 1987/10

Y1 - 1987/10

N2 - Schottky diodes have been prepared on ZnIn2S4 single crystal ternary compounds using Au as the barrier contact. Compared with theoretical models, these diodes show majority carrier tunnel and interface state effects. The influence of chemical etching on the electrical properties is also reported.

AB - Schottky diodes have been prepared on ZnIn2S4 single crystal ternary compounds using Au as the barrier contact. Compared with theoretical models, these diodes show majority carrier tunnel and interface state effects. The influence of chemical etching on the electrical properties is also reported.

UR - http://www.scopus.com/inward/record.url?scp=0023436028&partnerID=8YFLogxK

U2 - 10.1016/0165-1633(87)90080-3

DO - 10.1016/0165-1633(87)90080-3

M3 - Artículo

SN - 0165-1633

VL - 16

SP - 315

EP - 318

JO - Solar Energy Materials

JF - Solar Energy Materials

IS - 4

ER -

Schottky diodes on ZnIn₂S₄ single crystals

Abstract

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