TY - GEN
T1 - Schottky barrier height extraction of multi-channel one-dimensional FETs
AU - Pacheco-Sanchez, Anibal
AU - Ramirez-Garcia, Eloy
AU - Enciso-Aguilar, Mauro A.
AU - Jimenez, David
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/2
Y1 - 2020/2
N2 - The Schottky barrier height of fabricated multi-wire and multi-carbon-nanotube field-effect transistors is characterized here with an extraction method based on the Landauer-Biittiker equation. A comparison with results obtained with an extraction method not considering the quasi-ballistic transport in these devices shows that the latter underestimates the barrier height. Issues on the extraction due to non-uniform interfaces are pointed out and further studied and described by a numerical device simulator.
AB - The Schottky barrier height of fabricated multi-wire and multi-carbon-nanotube field-effect transistors is characterized here with an extraction method based on the Landauer-Biittiker equation. A comparison with results obtained with an extraction method not considering the quasi-ballistic transport in these devices shows that the latter underestimates the barrier height. Issues on the extraction due to non-uniform interfaces are pointed out and further studied and described by a numerical device simulator.
KW - CNTFET
KW - NWFET
KW - Schottky barrier
UR - http://www.scopus.com/inward/record.url?scp=85084976062&partnerID=8YFLogxK
U2 - 10.1109/LAEDC49063.2020.9072959
DO - 10.1109/LAEDC49063.2020.9072959
M3 - Contribución a la conferencia
AN - SCOPUS:85084976062
T3 - LAEDC 2020 - Latin American Electron Devices Conference
BT - LAEDC 2020 - Latin American Electron Devices Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 Latin American Electron Devices Conference, LAEDC 2020
Y2 - 25 February 2020 through 28 February 2020
ER -