Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures

M. Dybiec; S. Ostapenko; T. V. Torchynska; E. Velasquez Losada

doi:10.1063/1.1763979

Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures

M. Dybiec, S. Ostapenko, T. V. Torchynska, E. Velasquez Losada

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Abstract

The InAs/InGaAs quantum-dot (QD) structures were investigated using scanning photoluminescence (PL) spectroscopy, at different temperatures. By mapping sample with different In/Ga composition of the In _xGa _1-xAs capping layers (0.1≤x≥0.2), a strong inhomogeneity of the PL intensity was found. In the quantum-dot PL maps, a reduction of the PL intensity was due to gradual blue shift of the luminescence maximum at 300 K and red shift at 80 K. It was observed that PL intensity was varied at a stable peak position of the PL maximum.

Original language	English
Pages (from-to)	5165-5167
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	25
DOIs	https://doi.org/10.1063/1.1763979
State	Published - 21 Jun 2004
Externally published	Yes

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title = "Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures",

abstract = "The InAs/InGaAs quantum-dot (QD) structures were investigated using scanning photoluminescence (PL) spectroscopy, at different temperatures. By mapping sample with different In/Ga composition of the In xGa 1-xAs capping layers (0.1≤x≥0.2), a strong inhomogeneity of the PL intensity was found. In the quantum-dot PL maps, a reduction of the PL intensity was due to gradual blue shift of the luminescence maximum at 300 K and red shift at 80 K. It was observed that PL intensity was varied at a stable peak position of the PL maximum.",

author = "M. Dybiec and S. Ostapenko and Torchynska, {T. V.} and Losada, {E. Velasquez}",

note = "Funding Information: The authors thank Dr. Andreas Stintz for growing the experimental set of InAs quantum dot wafers and Dr. Igor Tarasov for technical and computer assistance. The work was supported by NSF Award No. DMI-0218967 and by NSF-CONACYT program. ",

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doi = "10.1063/1.1763979",

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T1 - Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures

AU - Dybiec, M.

AU - Ostapenko, S.

AU - Torchynska, T. V.

AU - Losada, E. Velasquez

N1 - Funding Information: The authors thank Dr. Andreas Stintz for growing the experimental set of InAs quantum dot wafers and Dr. Igor Tarasov for technical and computer assistance. The work was supported by NSF Award No. DMI-0218967 and by NSF-CONACYT program.

PY - 2004/6/21

Y1 - 2004/6/21

N2 - The InAs/InGaAs quantum-dot (QD) structures were investigated using scanning photoluminescence (PL) spectroscopy, at different temperatures. By mapping sample with different In/Ga composition of the In xGa 1-xAs capping layers (0.1≤x≥0.2), a strong inhomogeneity of the PL intensity was found. In the quantum-dot PL maps, a reduction of the PL intensity was due to gradual blue shift of the luminescence maximum at 300 K and red shift at 80 K. It was observed that PL intensity was varied at a stable peak position of the PL maximum.

AB - The InAs/InGaAs quantum-dot (QD) structures were investigated using scanning photoluminescence (PL) spectroscopy, at different temperatures. By mapping sample with different In/Ga composition of the In xGa 1-xAs capping layers (0.1≤x≥0.2), a strong inhomogeneity of the PL intensity was found. In the quantum-dot PL maps, a reduction of the PL intensity was due to gradual blue shift of the luminescence maximum at 300 K and red shift at 80 K. It was observed that PL intensity was varied at a stable peak position of the PL maximum.

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U2 - 10.1063/1.1763979

DO - 10.1063/1.1763979

M3 - Artículo

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VL - 84

SP - 5165

EP - 5167

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures

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