Rutherford backscattering spectrometry analysis of TiO2 thin films

F. Fernández-Lima; E. Vigil; I. Zumeta; F. L. Freire; R. Prioli; E. Pedrero

doi:10.1016/S1044-5803(03)00084-6

Rutherford backscattering spectrometry analysis of TiO₂ thin films

F. Fernández-Lima, E. Vigil, I. Zumeta, F. L. Freire, R. Prioli, E. Pedrero

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

TiO₂ layers grown by microwave-activated chemical bath deposition (MW) and dip coating (DC), as well as by the combination of both techniques, were studied by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). RBS analysis allows the determination of the stoichiometry and the thickness (in atoms/cm²) of the TiO₂ layers. TiO₂ layers grown by DC have higher growth rates on a TiO₂ film obtained by MW compared to deposition directly onto an indium-tin oxide (ITO) substrate. TiO₂ layers grown by MW on a film obtained by DC have higher growth rates when compared to layers deposited onto ITO substrates. In this case, AFM analysis shows that the surface is rough and RBS reveals the presence of holes in TiO₂ films.

Original language	English
Pages (from-to)	155-160
Number of pages	6
Journal	Materials Characterization
Volume	50
Issue number	2-3
DOIs	https://doi.org/10.1016/S1044-5803(03)00084-6
State	Published - Mar 2003
Externally published	Yes
Event	Brazilian Materials Research Society Symposia: Current Trends - Rio de Janeiro, Brazil Duration: 7 Jul 2002 → 10 Jul 2002

Keywords

AFM
RBS
SEM
TiO film

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10.1016/S1044-5803(03)00084-6

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title = "Rutherford backscattering spectrometry analysis of TiO2 thin films",

abstract = "TiO2 layers grown by microwave-activated chemical bath deposition (MW) and dip coating (DC), as well as by the combination of both techniques, were studied by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). RBS analysis allows the determination of the stoichiometry and the thickness (in atoms/cm2) of the TiO2 layers. TiO2 layers grown by DC have higher growth rates on a TiO2 film obtained by MW compared to deposition directly onto an indium-tin oxide (ITO) substrate. TiO2 layers grown by MW on a film obtained by DC have higher growth rates when compared to layers deposited onto ITO substrates. In this case, AFM analysis shows that the surface is rough and RBS reveals the presence of holes in TiO2 films.",

keywords = "AFM, RBS, SEM, TiO film",

author = "F. Fern{\'a}ndez-Lima and E. Vigil and I. Zumeta and Freire, {F. L.} and R. Prioli and E. Pedrero",

note = "Funding Information: The authors thank the Centro Latino-Americano de F{\'ı}sica, CLAF and the Brazilian agencies, CNPq and FAPERJ, for the financial support.; Brazilian Materials Research Society Symposia: Current Trends ; Conference date: 07-07-2002 Through 10-07-2002",

year = "2003",

month = mar,

doi = "10.1016/S1044-5803(03)00084-6",

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volume = "50",

pages = "155--160",

journal = "Materials Characterization",

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TY - JOUR

T1 - Rutherford backscattering spectrometry analysis of TiO2 thin films

AU - Fernández-Lima, F.

AU - Vigil, E.

AU - Zumeta, I.

AU - Freire, F. L.

AU - Prioli, R.

AU - Pedrero, E.

N1 - Funding Information: The authors thank the Centro Latino-Americano de Fı́sica, CLAF and the Brazilian agencies, CNPq and FAPERJ, for the financial support.

PY - 2003/3

Y1 - 2003/3

N2 - TiO2 layers grown by microwave-activated chemical bath deposition (MW) and dip coating (DC), as well as by the combination of both techniques, were studied by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). RBS analysis allows the determination of the stoichiometry and the thickness (in atoms/cm2) of the TiO2 layers. TiO2 layers grown by DC have higher growth rates on a TiO2 film obtained by MW compared to deposition directly onto an indium-tin oxide (ITO) substrate. TiO2 layers grown by MW on a film obtained by DC have higher growth rates when compared to layers deposited onto ITO substrates. In this case, AFM analysis shows that the surface is rough and RBS reveals the presence of holes in TiO2 films.

AB - TiO2 layers grown by microwave-activated chemical bath deposition (MW) and dip coating (DC), as well as by the combination of both techniques, were studied by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). RBS analysis allows the determination of the stoichiometry and the thickness (in atoms/cm2) of the TiO2 layers. TiO2 layers grown by DC have higher growth rates on a TiO2 film obtained by MW compared to deposition directly onto an indium-tin oxide (ITO) substrate. TiO2 layers grown by MW on a film obtained by DC have higher growth rates when compared to layers deposited onto ITO substrates. In this case, AFM analysis shows that the surface is rough and RBS reveals the presence of holes in TiO2 films.

KW - AFM

KW - RBS

KW - SEM

KW - TiO film

UR - http://www.scopus.com/inward/record.url?scp=0141929506&partnerID=8YFLogxK

U2 - 10.1016/S1044-5803(03)00084-6

DO - 10.1016/S1044-5803(03)00084-6

M3 - Artículo de la conferencia

AN - SCOPUS:0141929506

SN - 1044-5803

VL - 50

SP - 155

EP - 160

JO - Materials Characterization

JF - Materials Characterization

IS - 2-3

T2 - Brazilian Materials Research Society Symposia: Current Trends

Y2 - 7 July 2002 through 10 July 2002

ER -

Rutherford backscattering spectrometry analysis of TiO₂ thin films

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Keywords

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