TY - JOUR
T1 - Rutherford backscattering analysis of Bi-based superconducting films
AU - Cheang-Wong, J. C.
AU - Díaz-Valdés, E.
AU - Jergel, M.
AU - Morales, A.
AU - Vargas, R.
N1 - Funding Information:
The authors acknowledge K. López and F.J. Jaimes for accelerator operation and Dr Matej Jergel for his help in XRD measurements. This work was supported by CONACyT under contracts G0010-E and F036-E9109.
PY - 2000/9/3
Y1 - 2000/9/3
N2 - The elemental composition, film thickness and concentration depth profiles of precursor and superconducting (Bi, Pb)-Sr-Ca-Cu-O films were studied by the Rutherford backscattering spectrometry (RBS) technique. The precursor films were deposited on MgO single-crystalline substrates with an aerosol atomized ultrasonically from an aqueous nitrate solution. Precursor films, approximately 5-5.5 μm thick, were then annealed in air at temperatures ranging from 835 to 855 °C for 10 h. X-Ray diffraction studies revealed mainly the presence of the 2212 phase (for the bulk, Tc is approx. 85 K). Films annealed at temperatures Ta≥850 °C were superconducting, with Tc in the range 60-71 K showing a double Tc onset at 85 K and 110 K. The RBS study of the Bi depth profile of precursors showed a maximum content of Bi at a depth of approximately 1-2 μm from the film surface. After film annealing, the Bi content was found to be constant from the surface to approximately 1 μm depth, then decreasing in value towards the film-substrate interface.
AB - The elemental composition, film thickness and concentration depth profiles of precursor and superconducting (Bi, Pb)-Sr-Ca-Cu-O films were studied by the Rutherford backscattering spectrometry (RBS) technique. The precursor films were deposited on MgO single-crystalline substrates with an aerosol atomized ultrasonically from an aqueous nitrate solution. Precursor films, approximately 5-5.5 μm thick, were then annealed in air at temperatures ranging from 835 to 855 °C for 10 h. X-Ray diffraction studies revealed mainly the presence of the 2212 phase (for the bulk, Tc is approx. 85 K). Films annealed at temperatures Ta≥850 °C were superconducting, with Tc in the range 60-71 K showing a double Tc onset at 85 K and 110 K. The RBS study of the Bi depth profile of precursors showed a maximum content of Bi at a depth of approximately 1-2 μm from the film surface. After film annealing, the Bi content was found to be constant from the surface to approximately 1 μm depth, then decreasing in value towards the film-substrate interface.
UR - http://www.scopus.com/inward/record.url?scp=0343408412&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(00)01116-0
DO - 10.1016/S0040-6090(00)01116-0
M3 - Artículo
AN - SCOPUS:0343408412
SN - 0040-6090
VL - 373
SP - 117
EP - 121
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -