Role of surface substances in excitation of porous silicon photoluminescence

L. Y. Khomenkova; N. P. Baran; B. R. Dzhumaev; N. E. Korsunskaya; T. V. Torchinskaya; Y. Goldstein; E. Savir; A. Many

Role of surface substances in excitation of porous silicon photoluminescence

L. Y. Khomenkova, N. P. Baran, B. R. Dzhumaev, N. E. Korsunskaya, T. V. Torchinskaya, Y. Goldstein, E. Savir, A. Many

Research output: Contribution to journal › Article › peer-review

Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.

Original language	English
Pages (from-to)	135-138
Number of pages	4
Journal	Opto-electronics Review
Volume	7
Issue number	2
State	Published - 1999
Externally published	Yes

Keywords

Absorption center
Emission center
Photoluminescence
Photoluminescence excitation
Porous silicon

Cite this

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title = "Role of surface substances in excitation of porous silicon photoluminescence",

abstract = "Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.",

keywords = "Absorption center, Emission center, Photoluminescence, Photoluminescence excitation, Porous silicon",

author = "Khomenkova, {L. Y.} and Baran, {N. P.} and Dzhumaev, {B. R.} and Korsunskaya, {N. E.} and Torchinskaya, {T. V.} and Y. Goldstein and E. Savir and A. Many",

year = "1999",

language = "Ingl{\'e}s",

volume = "7",

pages = "135--138",

journal = "Opto-electronics Review",

issn = "1230-3402",

number = "2",

}

TY - JOUR

T1 - Role of surface substances in excitation of porous silicon photoluminescence

AU - Khomenkova, L. Y.

AU - Baran, N. P.

AU - Dzhumaev, B. R.

AU - Korsunskaya, N. E.

AU - Torchinskaya, T. V.

AU - Goldstein, Y.

AU - Savir, E.

AU - Many, A.

PY - 1999

Y1 - 1999

N2 - Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.

AB - Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.

KW - Absorption center

KW - Emission center

KW - Photoluminescence

KW - Photoluminescence excitation

KW - Porous silicon

UR - http://www.scopus.com/inward/record.url?scp=0012764123&partnerID=8YFLogxK

M3 - Artículo

SN - 1230-3402

VL - 7

SP - 135

EP - 138

JO - Opto-electronics Review

JF - Opto-electronics Review

IS - 2

ER -

Role of surface substances in excitation of porous silicon photoluminescence

Abstract

Keywords

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