Role of oxidation on porous silicon photoluminescence and its excitation

T. V. Torchinskaya; N. E. Korsunskaya; L. Yu Khomenkova; B. R. Dhumaev; S. M. Prokes

doi:10.1016/S0040-6090(00)01351-1

Role of oxidation on porous silicon photoluminescence and its excitation

T. V. Torchinskaya, N. E. Korsunskaya, L. Yu Khomenkova, B. R. Dhumaev, S. M. Prokes

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The effect of preparation regimes on the oxide composition, the number of dangling bonds, the photoluminescence and its excitation spectra have been investigated. The influence of the oxidation process during aging of porous silicon at ambient atmosphere and annealing in dry oxygen has been investigated via photoluminescence (PL), PL excitation (PLE), electron paramagnetic resonance (EPR) and X-ray photoelectron emission spectroscopy (XPS). Results indicate a direct correlation between the suboxide content and the PL intensity, while no correlation was noted between the PL intensity and the concentration of Si dangling bonds (non-radiative recombination centers). These results given further support to a suboxide-related color center as the source of the intense red luminescence.

Original language	English
Pages (from-to)	88-93
Number of pages	6
Journal	Thin Solid Films
Volume	381
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)01351-1
State	Published - 2 Jan 2001

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title = "Role of oxidation on porous silicon photoluminescence and its excitation",

abstract = "The effect of preparation regimes on the oxide composition, the number of dangling bonds, the photoluminescence and its excitation spectra have been investigated. The influence of the oxidation process during aging of porous silicon at ambient atmosphere and annealing in dry oxygen has been investigated via photoluminescence (PL), PL excitation (PLE), electron paramagnetic resonance (EPR) and X-ray photoelectron emission spectroscopy (XPS). Results indicate a direct correlation between the suboxide content and the PL intensity, while no correlation was noted between the PL intensity and the concentration of Si dangling bonds (non-radiative recombination centers). These results given further support to a suboxide-related color center as the source of the intense red luminescence.",

author = "Torchinskaya, {T. V.} and Korsunskaya, {N. E.} and Khomenkova, {L. Yu} and Dhumaev, {B. R.} and Prokes, {S. M.}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology of Ukraine (grant 2M/1406), CONACYT Mexico and the Office of Naval Research.",

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TY - JOUR

T1 - Role of oxidation on porous silicon photoluminescence and its excitation

AU - Torchinskaya, T. V.

AU - Korsunskaya, N. E.

AU - Khomenkova, L. Yu

AU - Dhumaev, B. R.

AU - Prokes, S. M.

N1 - Funding Information: This work was supported by the Ministry of Science and Technology of Ukraine (grant 2M/1406), CONACYT Mexico and the Office of Naval Research.

PY - 2001/1/2

Y1 - 2001/1/2

N2 - The effect of preparation regimes on the oxide composition, the number of dangling bonds, the photoluminescence and its excitation spectra have been investigated. The influence of the oxidation process during aging of porous silicon at ambient atmosphere and annealing in dry oxygen has been investigated via photoluminescence (PL), PL excitation (PLE), electron paramagnetic resonance (EPR) and X-ray photoelectron emission spectroscopy (XPS). Results indicate a direct correlation between the suboxide content and the PL intensity, while no correlation was noted between the PL intensity and the concentration of Si dangling bonds (non-radiative recombination centers). These results given further support to a suboxide-related color center as the source of the intense red luminescence.

AB - The effect of preparation regimes on the oxide composition, the number of dangling bonds, the photoluminescence and its excitation spectra have been investigated. The influence of the oxidation process during aging of porous silicon at ambient atmosphere and annealing in dry oxygen has been investigated via photoluminescence (PL), PL excitation (PLE), electron paramagnetic resonance (EPR) and X-ray photoelectron emission spectroscopy (XPS). Results indicate a direct correlation between the suboxide content and the PL intensity, while no correlation was noted between the PL intensity and the concentration of Si dangling bonds (non-radiative recombination centers). These results given further support to a suboxide-related color center as the source of the intense red luminescence.

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U2 - 10.1016/S0040-6090(00)01351-1

DO - 10.1016/S0040-6090(00)01351-1

M3 - Artículo

SN - 0040-6090

VL - 381

SP - 88

EP - 93

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Role of oxidation on porous silicon photoluminescence and its excitation

Abstract

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