Abstract
In CdS crystals, the influence of ultrasound (US) pulses on photocurrent, thermally stimulated current and edge emission spectra was observed. The effect was found to intensify with dislocation density. The analysis of obtained results showed that US treatment resulted in the decrease of shallow donor density in crystal bulk and its increase in near dislocation regions. This process of donor gettering by dislocations was shown to be one of the mechanisms of electron-beam-pumped CdS-based lasers degradation.
Translated title of the contribution | Redistribución de defectos de puntos móviles en cristales de CdS bajo tratamiento con ultrasonidos |
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Original language | English |
Pages (from-to) | 258-262 |
Number of pages | 5 |
Journal | Physica B: Condensed Matter |
Volume | 340-342 |
DOIs | |
State | Published - 31 Dec 2003 |
Event | Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003 |
Keywords
- Dislocations
- Point defects
- Ultrasound