Redistribution of mobile point defects in CdS crystals under ultrasound treatment

L. V. Borkovska, M. P. Baran, N. O. Korsunska, I. V. Markevich, O. F. Singaevsky, M. K. Sheinkman, T. V. Torchynska

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

In CdS crystals, the influence of ultrasound (US) pulses on photocurrent, thermally stimulated current and edge emission spectra was observed. The effect was found to intensify with dislocation density. The analysis of obtained results showed that US treatment resulted in the decrease of shallow donor density in crystal bulk and its increase in near dislocation regions. This process of donor gettering by dislocations was shown to be one of the mechanisms of electron-beam-pumped CdS-based lasers degradation.

Translated title of the contributionRedistribución de defectos de puntos móviles en cristales de CdS bajo tratamiento con ultrasonidos
Original languageEnglish
Pages (from-to)258-262
Number of pages5
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
StatePublished - 31 Dec 2003
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: 28 Jul 20031 Aug 2003

Keywords

  • Dislocations
  • Point defects
  • Ultrasound

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