Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard

F. Hernandez-Marquez; Z. Rivera-Alvarez; A. Guillén; J. Huerta-Ruelas; I. C. Hernández; V. H. Méndez-García; M. Lopez-Lopez

doi:10.1109/ICEEE.2006.251902

Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard

F. Hernandez-Marquez, Z. Rivera-Alvarez, A. Guillén, J. Huerta-Ruelas, I. C. Hernández, V. H. Méndez-García, M. Lopez-Lopez

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Abstract

In the last few years we have been working in order to obtain a Resistance Standard using the Quantum Hall Effect (QHE). Several AlGaAs/GaAs structures and a variety of ohmic contacts procedures have been evaluated to achieve devices with metrological quality. Recently we have obtained devices with the following characteristics: The resistance plateau corresponding to the quantum number i = 2 is obtained for a magnetic flux density in the order of 7 T at 1.3 K, the residual value of the longitudinal resistance is 107 μΩ for a current of 50 μA. These characteristics are comparable with those obtained in QHE devices used at Centro Nacional de Metrologia (CENAM). Such results show that the developed devices have the quality required for reference standard dc resistance measurements.

Original language	American English
DOIs	https://doi.org/10.1109/ICEEE.2006.251902
State	Published - 1 Dec 2006
Event	2006 3rd International Conference on Electrical and Electronics Engineering - Duration: 1 Dec 2006 → …

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Conference	2006 3rd International Conference on Electrical and Electronics Engineering
Period	1/12/06 → …

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10.1109/ICEEE.2006.251902

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Hernandez-Marquez, F., Rivera-Alvarez, Z., Guillén, A., Huerta-Ruelas, J., Hernández, I. C., Méndez-García, V. H., & Lopez-Lopez, M. (2006). Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard. Paper presented at 2006 3rd International Conference on Electrical and Electronics Engineering. https://doi.org/10.1109/ICEEE.2006.251902

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title = "Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard",

abstract = "In the last few years we have been working in order to obtain a Resistance Standard using the Quantum Hall Effect (QHE). Several AlGaAs/GaAs structures and a variety of ohmic contacts procedures have been evaluated to achieve devices with metrological quality. Recently we have obtained devices with the following characteristics: The resistance plateau corresponding to the quantum number i = 2 is obtained for a magnetic flux density in the order of 7 T at 1.3 K, the residual value of the longitudinal resistance is 107 μΩ for a current of 50 μA. These characteristics are comparable with those obtained in QHE devices used at Centro Nacional de Metrologia (CENAM). Such results show that the developed devices have the quality required for reference standard dc resistance measurements.",

author = "F. Hernandez-Marquez and Z. Rivera-Alvarez and A. Guill{\'e}n and J. Huerta-Ruelas and Hern{\'a}ndez, {I. C.} and M{\'e}ndez-Garc{\'i}a, {V. H.} and M. Lopez-Lopez",

year = "2006",

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doi = "10.1109/ICEEE.2006.251902",

language = "American English",

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Hernandez-Marquez, F, Rivera-Alvarez, Z, Guillén, A, Huerta-Ruelas, J, Hernández, IC, Méndez-García, VH & Lopez-Lopez, M 2006, 'Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard', Paper presented at 2006 3rd International Conference on Electrical and Electronics Engineering, 1/12/06. https://doi.org/10.1109/ICEEE.2006.251902

TY - CONF

T1 - Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard

AU - Hernandez-Marquez, F.

AU - Rivera-Alvarez, Z.

AU - Guillén, A.

AU - Huerta-Ruelas, J.

AU - Hernández, I. C.

AU - Méndez-García, V. H.

AU - Lopez-Lopez, M.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In the last few years we have been working in order to obtain a Resistance Standard using the Quantum Hall Effect (QHE). Several AlGaAs/GaAs structures and a variety of ohmic contacts procedures have been evaluated to achieve devices with metrological quality. Recently we have obtained devices with the following characteristics: The resistance plateau corresponding to the quantum number i = 2 is obtained for a magnetic flux density in the order of 7 T at 1.3 K, the residual value of the longitudinal resistance is 107 μΩ for a current of 50 μA. These characteristics are comparable with those obtained in QHE devices used at Centro Nacional de Metrologia (CENAM). Such results show that the developed devices have the quality required for reference standard dc resistance measurements.

AB - In the last few years we have been working in order to obtain a Resistance Standard using the Quantum Hall Effect (QHE). Several AlGaAs/GaAs structures and a variety of ohmic contacts procedures have been evaluated to achieve devices with metrological quality. Recently we have obtained devices with the following characteristics: The resistance plateau corresponding to the quantum number i = 2 is obtained for a magnetic flux density in the order of 7 T at 1.3 K, the residual value of the longitudinal resistance is 107 μΩ for a current of 50 μA. These characteristics are comparable with those obtained in QHE devices used at Centro Nacional de Metrologia (CENAM). Such results show that the developed devices have the quality required for reference standard dc resistance measurements.

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Y2 - 1 December 2006

ER -

Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard

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