RAMAN SCATTERING IN ULTRA HEAVILY DOPED Si AND Ge: THE DEPENDENCE ON FREE CARRIER AND SUBSTITUTIONAL DOPANT DENSITIES.

A. Compaan, G. Contreras, M. Cardona, A. Axmann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Fingerprint

Dive into the research topics of 'RAMAN SCATTERING IN ULTRA HEAVILY DOPED Si AND Ge: THE DEPENDENCE ON FREE CARRIER AND SUBSTITUTIONAL DOPANT DENSITIES.'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemistry