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Dive into the research topics of 'RAMAN SCATTERING IN ULTRA HEAVILY DOPED Si AND Ge: THE DEPENDENCE ON FREE CARRIER AND SUBSTITUTIONAL DOPANT DENSITIES.'. Together they form a unique fingerprint.- Sort by
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A. Compaan, G. Contreras, M. Cardona, A. Axmann
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review