TY - JOUR
T1 - Raman scattering, emission, and deep defect evolution in ZnO:In thin films
AU - Torchynska, Tetyana
AU - El Filali, Brahim
AU - Jaramillo Gomez, Juan Antonio
AU - Polupan, Georgiy
AU - Ramírez García, Jorge Luis
AU - Shcherbyna, Lyudmyla
N1 - Publisher Copyright:
© 2020 Author(s).
PY - 2020/12/1
Y1 - 2020/12/1
N2 - The impact of In doping on the parameters of ZnO films has been studied. Film structure, emission, and evolution of O- and In-related defects versus In contents have been investigated using Raman scattering, photoluminescence (PL), x-ray diffraction, and high-resolution x-ray photoelectron spectroscopy (HR-XPS). Three stages of the variation of optical and structural parameters of ZnO films at In doping were detected. The formation of In-related point defects is connected with the first two stages, which is accompanied by improving the ZnO crystal structure, the insignificant changes of Raman scattering spectra, and the intensity increases of high energy emission bands. At the third stage of In doping, the intensities of Raman peaks and PL bands decrease owing to the formation of In-related nanoclusters and O-related defects. To analyze the In-related defects, HR-XPS was monitored for the lines (i) In 3d3/2 and In3d5/2, and (ii) In4d3/2 and In4d5/2 in In-doped ZnO thin films. The trend in the change of the In ion charges versus In contents has been revealed and discussed.
AB - The impact of In doping on the parameters of ZnO films has been studied. Film structure, emission, and evolution of O- and In-related defects versus In contents have been investigated using Raman scattering, photoluminescence (PL), x-ray diffraction, and high-resolution x-ray photoelectron spectroscopy (HR-XPS). Three stages of the variation of optical and structural parameters of ZnO films at In doping were detected. The formation of In-related point defects is connected with the first two stages, which is accompanied by improving the ZnO crystal structure, the insignificant changes of Raman scattering spectra, and the intensity increases of high energy emission bands. At the third stage of In doping, the intensities of Raman peaks and PL bands decrease owing to the formation of In-related nanoclusters and O-related defects. To analyze the In-related defects, HR-XPS was monitored for the lines (i) In 3d3/2 and In3d5/2, and (ii) In4d3/2 and In4d5/2 in In-doped ZnO thin films. The trend in the change of the In ion charges versus In contents has been revealed and discussed.
KW - Estructura cristalina
KW - semiconductores II-VI
KW - películas metálicas
KW - minerales de óxido
KW - Defectos puntuales
KW - dispersión Raman
KW - dopaje de semiconductores
KW - espectroscopía de fotoelectrones de rayos X
KW - Óxido de zinc
KW - Defectos profundos
KW - Películas delgadas de ZnO dopadas
KW - Estructura de la película
KW - Emisión de alta energía
KW - alta resolución
KW - carga de iones
KW - espectros de dispersión Raman
KW - parámetro estructural
KW - Peliculas delgadas
UR - http://www.scopus.com/inward/record.url?scp=85093973392&partnerID=8YFLogxK
U2 - 10.1116/6.0000364
DO - 10.1116/6.0000364
M3 - Artículo
AN - SCOPUS:85093973392
SN - 0734-2101
VL - 38
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 6
M1 - 063409
ER -