Raman scattering characterization of macro- and nanoporous silicon

N. Korsunska; B. Bulakh; B. Jumayev; L. Khomenkova; V. Yukhymchuk; T. Torchynska

doi:10.1016/j.apsusc.2004.06.151

Raman scattering characterization of macro- and nanoporous silicon

N. Korsunska, B. Bulakh, B. Jumayev, L. Khomenkova, V. Yukhymchuk, T. Torchynska

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The structural properties and Raman scattering spectra of porous silicon layers were investigated. The enhancement of intensity of Raman line from porous silicon in comparison with a substrate without any shift of peak position was observed. It is shown that this effect is due to presence of macropores in investigated samples. The enhancement is explained by multiple absorption of probe light scattered and reflected inside macropores while a coincidence of shape and peak position of Raman lines from porous layer and silicon substrate is due to low thickness of nanoporous layer. The method of investigation of porous layer structure based on the combination of Raman scattering effect with variation of probe light wavelength is proposed.

Original language	English
Pages (from-to)	30-35
Number of pages	6
Journal	Applied Surface Science
Volume	243
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.06.151
State	Published - 30 Apr 2005

Keywords

Atomic force microscopy
Nanoporous silicon
Raman scattering effect

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10.1016/j.apsusc.2004.06.151

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@article{166e14b2ad244990b995488583c41855,

title = "Raman scattering characterization of macro- and nanoporous silicon",

abstract = "The structural properties and Raman scattering spectra of porous silicon layers were investigated. The enhancement of intensity of Raman line from porous silicon in comparison with a substrate without any shift of peak position was observed. It is shown that this effect is due to presence of macropores in investigated samples. The enhancement is explained by multiple absorption of probe light scattered and reflected inside macropores while a coincidence of shape and peak position of Raman lines from porous layer and silicon substrate is due to low thickness of nanoporous layer. The method of investigation of porous layer structure based on the combination of Raman scattering effect with variation of probe light wavelength is proposed.",

keywords = "Atomic force microscopy, Nanoporous silicon, Raman scattering effect",

author = "N. Korsunska and B. Bulakh and B. Jumayev and L. Khomenkova and V. Yukhymchuk and T. Torchynska",

note = "Funding Information: This work was supported by National Academy of Sciences of Ukraine, National Politechnical Institute of Mexico and CONASYT, Mexico, project 42436-Y.",

year = "2005",

month = apr,

day = "30",

doi = "10.1016/j.apsusc.2004.06.151",

language = "Ingl{\'e}s",

volume = "243",

pages = "30--35",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "1-4",

}

TY - JOUR

T1 - Raman scattering characterization of macro- and nanoporous silicon

AU - Korsunska, N.

AU - Bulakh, B.

AU - Jumayev, B.

AU - Khomenkova, L.

AU - Yukhymchuk, V.

AU - Torchynska, T.

N1 - Funding Information: This work was supported by National Academy of Sciences of Ukraine, National Politechnical Institute of Mexico and CONASYT, Mexico, project 42436-Y.

PY - 2005/4/30

Y1 - 2005/4/30

N2 - The structural properties and Raman scattering spectra of porous silicon layers were investigated. The enhancement of intensity of Raman line from porous silicon in comparison with a substrate without any shift of peak position was observed. It is shown that this effect is due to presence of macropores in investigated samples. The enhancement is explained by multiple absorption of probe light scattered and reflected inside macropores while a coincidence of shape and peak position of Raman lines from porous layer and silicon substrate is due to low thickness of nanoporous layer. The method of investigation of porous layer structure based on the combination of Raman scattering effect with variation of probe light wavelength is proposed.

AB - The structural properties and Raman scattering spectra of porous silicon layers were investigated. The enhancement of intensity of Raman line from porous silicon in comparison with a substrate without any shift of peak position was observed. It is shown that this effect is due to presence of macropores in investigated samples. The enhancement is explained by multiple absorption of probe light scattered and reflected inside macropores while a coincidence of shape and peak position of Raman lines from porous layer and silicon substrate is due to low thickness of nanoporous layer. The method of investigation of porous layer structure based on the combination of Raman scattering effect with variation of probe light wavelength is proposed.

KW - Atomic force microscopy

KW - Nanoporous silicon

KW - Raman scattering effect

UR - http://www.scopus.com/inward/record.url?scp=14544271031&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.06.151

DO - 10.1016/j.apsusc.2004.06.151

M3 - Artículo

SN - 0169-4332

VL - 243

SP - 30

EP - 35

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Raman scattering characterization of macro- and nanoporous silicon

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