Raman scattering and X-ray diffraction study in Cu2GeSe3

G. Marcano, C. Rincón, G. Marín, G. E. Delgado, A. J. Mora, J. L. Herrera-Pérez, J. G. Mendoza-Alvarez, P. Rodríguez

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

A combined study of X-ray diffraction data and micro-Raman scattering of Cu2GeSe3 is presented. From the analysis of the X-ray data it is confirmed that this compound crystallizes in an orthorhombic cell, space group I m m 2. From Raman spectra, optical modes are identified and their possible symmetry assignments are suggested. Peaks at 212, 266 and 300 cm-1, tentatively assigned to B2 modes, agree well with those reported from infrared reflectivity. The most strong peak at 189 cm-1 which is only Raman active is assigned to one of the two A2 modes. Lines at 135, 235 and 254 cm-1 are attributed to A1 or B1 modes. The highest phonon frequency band, observed at 385 cm-1, probably comprises the remaining A2 mode and an overtone from the strong line at 189 cm-1.

Original languageEnglish
Pages (from-to)65-68
Number of pages4
JournalSolid State Communications
Volume146
Issue number1-2
DOIs
StatePublished - Apr 2008
Externally publishedYes

Keywords

  • A. Semiconductors
  • D. Optical properties
  • D. Raman scattering
  • E. Elastic light scattering

Fingerprint

Dive into the research topics of 'Raman scattering and X-ray diffraction study in Cu2GeSe3'. Together they form a unique fingerprint.

Cite this