Raman characterization of the In0.14Ga0.86As 0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy

J. Díaz-Reyes; E. López-Cruz; J. G. Mendoza-Álvarez; S. Jiménez-Sandoval

doi:10.1051/jp4:2006132040

Raman characterization of the In_0.14Ga_0.86As _0.13Sb_0.87 highly doped with Te grown on GaSb by liquid phase epitaxy

J. Díaz-Reyes, E. López-Cruz, J. G. Mendoza-Álvarez, S. Jiménez-Sandoval

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Using the liquid phase epitaxy technique under supercooling conditions we have grown In_0.14Ga_0.86As_0.13Sb_0.87 layers doped with tellurium lattice-matched to (100) n-GaSb substrates. Layers doped with tellurium were accomplished by incorporation of Sb₂Te ₃ pellets into the growth melt in different concentrations, in the range of 6.48 × 10^-6 to 4.31 × 10^-4 molar fraction. Using Raman scattering we characterized the structural quality. The Raman spectra show two main peaks located about 150 and 265 cm^-1, which were deconvoluted by four Lorentzians. In order to assign the peaks use is made of the random-element isodisplacement (REI) model. Comparison of the experimental results with the values obtained by REI model allows us to confirm that the bands correspond to the LO-like and TO-like of the binary compounds, GaAs and (GaSb+InAs).

Original language	English
Title of host publication	Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Pages	211-214
Number of pages	4
DOIs	https://doi.org/10.1051/jp4:2006132040
State	Published - Mar 2006
Event	ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France Duration: 3 Jul 2005 → 8 Jul 2005

Publication series

Name	Journal De Physique. IV : JP
Volume	132
ISSN (Print)	1155-4339
ISSN (Electronic)	1764-7177

Conference

Conference	ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Country/Territory	France
City	Aix-en-Provence
Period	3/07/05 → 8/07/05

Access to Document

10.1051/jp4:2006132040

Cite this

Díaz-Reyes, J., López-Cruz, E., Mendoza-Álvarez, J. G., & Jiménez-Sandoval, S. (2006). Raman characterization of the In_0.14Ga_0.86As _0.13Sb_0.87 highly doped with Te grown on GaSb by liquid phase epitaxy. In Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces (pp. 211-214). (Journal De Physique. IV : JP; Vol. 132). https://doi.org/10.1051/jp4:2006132040

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title = "Raman characterization of the In0.14Ga0.86As 0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy",

abstract = "Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14Ga0.86As0.13Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb substrates. Layers doped with tellurium were accomplished by incorporation of Sb2Te 3 pellets into the growth melt in different concentrations, in the range of 6.48 × 10-6 to 4.31 × 10-4 molar fraction. Using Raman scattering we characterized the structural quality. The Raman spectra show two main peaks located about 150 and 265 cm-1, which were deconvoluted by four Lorentzians. In order to assign the peaks use is made of the random-element isodisplacement (REI) model. Comparison of the experimental results with the values obtained by REI model allows us to confirm that the bands correspond to the LO-like and TO-like of the binary compounds, GaAs and (GaSb+InAs).",

author = "J. D{\'i}az-Reyes and E. L{\'o}pez-Cruz and Mendoza-{\'A}lvarez, {J. G.} and S. Jim{\'e}nez-Sandoval",

year = "2006",

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doi = "10.1051/jp4:2006132040",

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series = "Journal De Physique. IV : JP",

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booktitle = "Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces",

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Díaz-Reyes, J, López-Cruz, E, Mendoza-Álvarez, JG & Jiménez-Sandoval, S 2006, Raman characterization of the In_0.14Ga_0.86As _0.13Sb_0.87 highly doped with Te grown on GaSb by liquid phase epitaxy. in Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces. Journal De Physique. IV : JP, vol. 132, pp. 211-214, ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces, Aix-en-Provence, France, 3/07/05. https://doi.org/10.1051/jp4:2006132040

Raman characterization of the In_0.14Ga_0.86As _0.13Sb_0.87 highly doped with Te grown on GaSb by liquid phase epitaxy. / Díaz-Reyes, J.; López-Cruz, E.; Mendoza-Álvarez, J. G. et al.
Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces. 2006. p. 211-214 (Journal De Physique. IV : JP; Vol. 132).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Díaz-Reyes, J.

AU - López-Cruz, E.

AU - Mendoza-Álvarez, J. G.

AU - Jiménez-Sandoval, S.

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N2 - Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14Ga0.86As0.13Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb substrates. Layers doped with tellurium were accomplished by incorporation of Sb2Te 3 pellets into the growth melt in different concentrations, in the range of 6.48 × 10-6 to 4.31 × 10-4 molar fraction. Using Raman scattering we characterized the structural quality. The Raman spectra show two main peaks located about 150 and 265 cm-1, which were deconvoluted by four Lorentzians. In order to assign the peaks use is made of the random-element isodisplacement (REI) model. Comparison of the experimental results with the values obtained by REI model allows us to confirm that the bands correspond to the LO-like and TO-like of the binary compounds, GaAs and (GaSb+InAs).

AB - Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14Ga0.86As0.13Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb substrates. Layers doped with tellurium were accomplished by incorporation of Sb2Te 3 pellets into the growth melt in different concentrations, in the range of 6.48 × 10-6 to 4.31 × 10-4 molar fraction. Using Raman scattering we characterized the structural quality. The Raman spectra show two main peaks located about 150 and 265 cm-1, which were deconvoluted by four Lorentzians. In order to assign the peaks use is made of the random-element isodisplacement (REI) model. Comparison of the experimental results with the values obtained by REI model allows us to confirm that the bands correspond to the LO-like and TO-like of the binary compounds, GaAs and (GaSb+InAs).

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