TY - JOUR
T1 - Raman and photoreflectance study of InAs quantum dots on GaAs(100) substrates subjected to an in-situ
AU - Morales-Cortés, H.
AU - Mejía-García, C.
AU - Rojas-Ramírez, J. S.
AU - Martínez-Velis, I.
AU - Contreras-Guerrero, R.
AU - Ramírez-López, M.
AU - Paniagua-Mercado, A. M.
AU - López-López, M.
PY - 2012
Y1 - 2012
N2 - An analysis of the growth by molecular beam epitaxy technique of InAs self-assembling quantum dots (SAQDs) on GaAs (100) substrates subjected to an in situ annealing treatment was carried out. In the annealing process the GaAs buffer layer surface was exposed to high temperatures for a few seconds with the shutter of an arsenic Knudsen cell closed. In order to obtain InAs/GaAs (100) quantum dot samples with different annealing times and temperatures the Stranski-Krastanov growth method was applied. A Raman study in the range of 240 and 340 cm -1 at 18K and at room temperature (300K) with He-Ne laser was performed. The TO and LO-GaAs modes were identified. A blue shift of these modes indicates strain effects or structural disorder. The Photoreflectance (PR) spectra in the range of 0.9 and 1.35 eV presented transitions associated with SAQDs.
AB - An analysis of the growth by molecular beam epitaxy technique of InAs self-assembling quantum dots (SAQDs) on GaAs (100) substrates subjected to an in situ annealing treatment was carried out. In the annealing process the GaAs buffer layer surface was exposed to high temperatures for a few seconds with the shutter of an arsenic Knudsen cell closed. In order to obtain InAs/GaAs (100) quantum dot samples with different annealing times and temperatures the Stranski-Krastanov growth method was applied. A Raman study in the range of 240 and 340 cm -1 at 18K and at room temperature (300K) with He-Ne laser was performed. The TO and LO-GaAs modes were identified. A blue shift of these modes indicates strain effects or structural disorder. The Photoreflectance (PR) spectra in the range of 0.9 and 1.35 eV presented transitions associated with SAQDs.
KW - AFM
KW - InAs/GaAs quantum dots
KW - Photoreflectance spectroscopy
KW - Raman scattering
UR - http://www.scopus.com/inward/record.url?scp=84863309393&partnerID=8YFLogxK
M3 - Artículo
SN - 0004-881X
VL - 48
SP - 44
EP - 49
JO - Journal of the Australian Ceramic Society
JF - Journal of the Australian Ceramic Society
IS - 1
ER -