TY - JOUR
T1 - Properties of CdSe polycrystalline thin films grown by chemical bath
AU - Lozada-Morales, R.
AU - Rubín-Falfán, M.
AU - Portillo-Moreno, O.
AU - Pérez-Álvarez, J.
AU - Hoyos-Cabrera, R.
AU - Avelino-Flores, C.
AU - Zelaya-Angel, O.
AU - Guzmán-Mandujano, O.
AU - Del Angel, P.
AU - Martínez-Montes, J. L.
AU - Baños-López, L.
PY - 1999/7
Y1 - 1999/7
N2 - CdSe polycrystalline thin films were grown onto glass substrates by chemical bath deposition at 65 °C. Structural, optical, and electrical properties of samples were characterized. The layers grew in the cubic phase as evidenced by X-ray diffractograms. Using the first derivative of the optical absorption vs. phonon energy curves, two transitions were found, the fundamental at 1.8 eV and a second one at 2.2 eV, respectively. It is worthwhile to mention that the second transition has been reported only for the hexagonal CdSe modification. From the dark conductivity vs. 1/KT behavior on the 100-500 K range, it could be determined an activation energy of 0.3 eV at higher temperatures (>350 K) and a behavior following the variable range hopping model of Mott was satisfied at lower temperature. Electron dispersion spectroscopy measurements indicated stoichiometric CdSe material within the 1% error bar.
AB - CdSe polycrystalline thin films were grown onto glass substrates by chemical bath deposition at 65 °C. Structural, optical, and electrical properties of samples were characterized. The layers grew in the cubic phase as evidenced by X-ray diffractograms. Using the first derivative of the optical absorption vs. phonon energy curves, two transitions were found, the fundamental at 1.8 eV and a second one at 2.2 eV, respectively. It is worthwhile to mention that the second transition has been reported only for the hexagonal CdSe modification. From the dark conductivity vs. 1/KT behavior on the 100-500 K range, it could be determined an activation energy of 0.3 eV at higher temperatures (>350 K) and a behavior following the variable range hopping model of Mott was satisfied at lower temperature. Electron dispersion spectroscopy measurements indicated stoichiometric CdSe material within the 1% error bar.
UR - http://www.scopus.com/inward/record.url?scp=0345201639&partnerID=8YFLogxK
U2 - 10.1149/1.1391969
DO - 10.1149/1.1391969
M3 - Artículo
AN - SCOPUS:0345201639
SN - 0013-4651
VL - 146
SP - 2546
EP - 2548
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 7
ER -
