Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]

R. García; M. Estrada; A. Cerdeira; L. Reséndiz

doi:10.1109/MIEL.2002.1003308

Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]

R. García, M. Estrada, A. Cerdeira, L. Reséndiz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Reports low temperature polysilicon layers obtained by plasma enhanced crystallization performed in the same PECVD system where the a-Si:H layers are deposited. We analyze the effects of phosphorous concentration in the layer, hydrogen dilution of silane, temperature of the hydrogen plasma process and annealing temperature on the crystallization time, surface texture and resistivity of the layers. Layers were characterized electrically, by X-ray diffractometry and by atomic force microscopy. The characteristics of the polycrystalline films are discussed and compared with those of polycrystalline layers obtained by other methods.

Original language	English
Title of host publication	2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Publisher	IEEE Computer Society
Pages	509-512
Number of pages	4
ISBN (Print)	0780372352, 9780780372351
DOIs	https://doi.org/10.1109/MIEL.2002.1003308
State	Published - 2002
Externally published	Yes
Event	2002 23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia Duration: 12 May 2002 → 15 May 2002

Publication series

Name	2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Volume	2

Conference

Conference	2002 23rd International Conference on Microelectronics, MIEL 2002
Country/Territory	Serbia
City	Nis
Period	12/05/02 → 15/05/02

Access to Document

10.1109/MIEL.2002.1003308

Cite this

García, R., Estrada, M., Cerdeira, A., & Reséndiz, L. (2002). Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings (pp. 509-512). Article 1003308 (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/MIEL.2002.1003308

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title = "Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]",

abstract = "Reports low temperature polysilicon layers obtained by plasma enhanced crystallization performed in the same PECVD system where the a-Si:H layers are deposited. We analyze the effects of phosphorous concentration in the layer, hydrogen dilution of silane, temperature of the hydrogen plasma process and annealing temperature on the crystallization time, surface texture and resistivity of the layers. Layers were characterized electrically, by X-ray diffractometry and by atomic force microscopy. The characteristics of the polycrystalline films are discussed and compared with those of polycrystalline layers obtained by other methods.",

author = "R. Garc{\'i}a and M. Estrada and A. Cerdeira and L. Res{\'e}ndiz",

year = "2002",

doi = "10.1109/MIEL.2002.1003308",

language = "Ingl{\'e}s",

isbn = "0780372352",

series = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",

publisher = "IEEE Computer Society",

pages = "509--512",

booktitle = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",

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note = "2002 23rd International Conference on Microelectronics, MIEL 2002 ; Conference date: 12-05-2002 Through 15-05-2002",

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García, R, Estrada, M, Cerdeira, A & Reséndiz, L 2002, Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]. in 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings., 1003308, 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, vol. 2, IEEE Computer Society, pp. 509-512, 2002 23rd International Conference on Microelectronics, MIEL 2002, Nis, Serbia, 12/05/02. https://doi.org/10.1109/MIEL.2002.1003308

Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]. / García, R.; Estrada, M.; Cerdeira, A. et al.
2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. IEEE Computer Society, 2002. p. 509-512 1003308 (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Estrada, M.

AU - Cerdeira, A.

AU - Reséndiz, L.

PY - 2002

Y1 - 2002

N2 - Reports low temperature polysilicon layers obtained by plasma enhanced crystallization performed in the same PECVD system where the a-Si:H layers are deposited. We analyze the effects of phosphorous concentration in the layer, hydrogen dilution of silane, temperature of the hydrogen plasma process and annealing temperature on the crystallization time, surface texture and resistivity of the layers. Layers were characterized electrically, by X-ray diffractometry and by atomic force microscopy. The characteristics of the polycrystalline films are discussed and compared with those of polycrystalline layers obtained by other methods.

AB - Reports low temperature polysilicon layers obtained by plasma enhanced crystallization performed in the same PECVD system where the a-Si:H layers are deposited. We analyze the effects of phosphorous concentration in the layer, hydrogen dilution of silane, temperature of the hydrogen plasma process and annealing temperature on the crystallization time, surface texture and resistivity of the layers. Layers were characterized electrically, by X-ray diffractometry and by atomic force microscopy. The characteristics of the polycrystalline films are discussed and compared with those of polycrystalline layers obtained by other methods.

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DO - 10.1109/MIEL.2002.1003308

M3 - Contribución a la conferencia

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SN - 0780372352

SN - 9780780372351

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BT - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

PB - IEEE Computer Society

T2 - 2002 23rd International Conference on Microelectronics, MIEL 2002

Y2 - 12 May 2002 through 15 May 2002

ER -

García R, Estrada M, Cerdeira A, Reséndiz L. Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. IEEE Computer Society. 2002. p. 509-512. 1003308. (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings). doi: 10.1109/MIEL.2002.1003308

Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]

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