Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

Wei Zhang; Roberto Vargas; Takashi Goto; Yoshihiro Someno; Toshio Hirai

doi:10.1063/1.111934

Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

Wei Zhang, Roberto Vargas, Takashi Goto, Yoshihiro Someno, Toshio Hirai

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al₂O₃ substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr ₃-N₂-H₂-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al₂O₃ structure in surface acoustic wave (SAW) devices.

Original language	English
Pages (from-to)	1359-1361
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	11
DOIs	https://doi.org/10.1063/1.111934
State	Published - 1994
Externally published	Yes

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title = "Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates",

abstract = "AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.",

author = "Wei Zhang and Roberto Vargas and Takashi Goto and Yoshihiro Someno and Toshio Hirai",

year = "1994",

doi = "10.1063/1.111934",

language = "Ingl{\'e}s",

volume = "64",

pages = "1359--1361",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "11",

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T1 - Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

AU - Zhang, Wei

AU - Vargas, Roberto

AU - Goto, Takashi

AU - Someno, Yoshihiro

AU - Hirai, Toshio

PY - 1994

Y1 - 1994

N2 - AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.

AB - AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.

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U2 - 10.1063/1.111934

DO - 10.1063/1.111934

M3 - Artículo

SN - 0003-6951

VL - 64

SP - 1359

EP - 1361

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

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