Preparation of AgInS2 chalcopyrite thin films by chemical spray pyrolysis

M. Ortega-López; O. Vigil-Galán; F. Cruz Gandarilla; O. Solorza-Feria

doi:10.1016/S0025-5408(02)00999-6

Preparation of AgInS₂ chalcopyrite thin films by chemical spray pyrolysis

M. Ortega-López, O. Vigil-Galán, F. Cruz Gandarilla, O. Solorza-Feria

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

AgInS₂ thin films were prepared by the spray pyrolysis technique using a water/ethanol solution containing silver acetate, indium chloride and thiourea. We reported our results on the characterization of tetragonal AgInS₂ (chalcopyrite type) films, which were grown from indium deficient spraying solution. The films displayed a n-type conductivity with room temperature resistivities in the range between 10³ and 10⁴Ωcm. The absorption spectra of sprayed films revealed two direct band-gaps with characteristic energies around 1.87 and 2.01eV, which are in good agreement with the reported energy values for interband transitions from the split p-like valence band to the s-like conduction band in tetragonal AgInS₂ single crystals.

Original language	English
Pages (from-to)	55-61
Number of pages	7
Journal	Materials Research Bulletin
Volume	38
Issue number	1
DOIs	https://doi.org/10.1016/S0025-5408(02)00999-6
State	Published - 1 Jan 2003

Keywords

Chalcopyrite
Chemical spray pyrolysis
Optical properties
X-ray diffraction

Access to Document

10.1016/S0025-5408(02)00999-6

Cite this

@article{02e6a9a14a3a4a33a82c225aebabdd7e,

title = "Preparation of AgInS2 chalcopyrite thin films by chemical spray pyrolysis",

abstract = "AgInS2 thin films were prepared by the spray pyrolysis technique using a water/ethanol solution containing silver acetate, indium chloride and thiourea. We reported our results on the characterization of tetragonal AgInS2 (chalcopyrite type) films, which were grown from indium deficient spraying solution. The films displayed a n-type conductivity with room temperature resistivities in the range between 103 and 104Ωcm. The absorption spectra of sprayed films revealed two direct band-gaps with characteristic energies around 1.87 and 2.01eV, which are in good agreement with the reported energy values for interband transitions from the split p-like valence band to the s-like conduction band in tetragonal AgInS2 single crystals.",

keywords = "Chalcopyrite, Chemical spray pyrolysis, Optical properties, X-ray diffraction",

author = "M. Ortega-L{\'o}pez and O. Vigil-Gal{\'a}n and Gandarilla, {F. Cruz} and O. Solorza-Feria",

year = "2003",

month = jan,

day = "1",

doi = "10.1016/S0025-5408(02)00999-6",

language = "Ingl{\'e}s",

volume = "38",

pages = "55--61",

journal = "Materials Research Bulletin",

issn = "0025-5408",

number = "1",

}

TY - JOUR

T1 - Preparation of AgInS2 chalcopyrite thin films by chemical spray pyrolysis

AU - Ortega-López, M.

AU - Vigil-Galán, O.

AU - Gandarilla, F. Cruz

AU - Solorza-Feria, O.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - AgInS2 thin films were prepared by the spray pyrolysis technique using a water/ethanol solution containing silver acetate, indium chloride and thiourea. We reported our results on the characterization of tetragonal AgInS2 (chalcopyrite type) films, which were grown from indium deficient spraying solution. The films displayed a n-type conductivity with room temperature resistivities in the range between 103 and 104Ωcm. The absorption spectra of sprayed films revealed two direct band-gaps with characteristic energies around 1.87 and 2.01eV, which are in good agreement with the reported energy values for interband transitions from the split p-like valence band to the s-like conduction band in tetragonal AgInS2 single crystals.

AB - AgInS2 thin films were prepared by the spray pyrolysis technique using a water/ethanol solution containing silver acetate, indium chloride and thiourea. We reported our results on the characterization of tetragonal AgInS2 (chalcopyrite type) films, which were grown from indium deficient spraying solution. The films displayed a n-type conductivity with room temperature resistivities in the range between 103 and 104Ωcm. The absorption spectra of sprayed films revealed two direct band-gaps with characteristic energies around 1.87 and 2.01eV, which are in good agreement with the reported energy values for interband transitions from the split p-like valence band to the s-like conduction band in tetragonal AgInS2 single crystals.

KW - Chalcopyrite

KW - Chemical spray pyrolysis

KW - Optical properties

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0037214876&partnerID=8YFLogxK

U2 - 10.1016/S0025-5408(02)00999-6

DO - 10.1016/S0025-5408(02)00999-6

M3 - Artículo

SN - 0025-5408

VL - 38

SP - 55

EP - 61

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 1

ER -

Preparation of AgInS₂ chalcopyrite thin films by chemical spray pyrolysis

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this