TY - JOUR
T1 - Planarized ambipolar a-SiGe:H thin-film transistors
T2 - Influence of the sequence of fabrication process
AU - Dominguez, Miguel
AU - Rosales, Pedro
AU - Torres, Alfonso
AU - Flores, Francisco
AU - Molina, Joel
AU - Moreno, Mario
AU - Luna, Jose
AU - Orduña, Abdu
PY - 2014/9
Y1 - 2014/9
N2 - This work presents the fabrication, characterization and modeling of inverted staggered a-SiGe:H TFTs with planarized gate electrode. Using this structure two different sequences of fabrication are presented, where spin-on glass and silicon nitride are used as passivation layer, respectively. The results show ambipolar and unipolar behavior in the a-SiGe:H TFTs depending on the fabrication sequence. Also, trap density and characteristic energies for the deep localized states in the a-SiGe:H film are obtained. Using these parameters the device modeling is presented.
AB - This work presents the fabrication, characterization and modeling of inverted staggered a-SiGe:H TFTs with planarized gate electrode. Using this structure two different sequences of fabrication are presented, where spin-on glass and silicon nitride are used as passivation layer, respectively. The results show ambipolar and unipolar behavior in the a-SiGe:H TFTs depending on the fabrication sequence. Also, trap density and characteristic energies for the deep localized states in the a-SiGe:H film are obtained. Using these parameters the device modeling is presented.
KW - Ambipolar
KW - Hydrogenated amorphous silicon-germanium
KW - Modeling
KW - Planarized gate
KW - Spice
KW - Thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=84903597700&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2014.06.024
DO - 10.1016/j.sse.2014.06.024
M3 - Artículo
SN - 0038-1101
VL - 99
SP - 45
EP - 50
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -