Abstract
Equations and boundary conditions for charge transport in a monopolar semiconductor of finite size with metal contacts are formulated. It is shown that metal–p-type semiconductor contacts are essentially different from those made with n-type semiconductors. Furthermore, it is shown that the bulk space charge established over distances on the order of the Debye length does notinfluence the current–voltage characteristics of a semiconductor device operating in a linear mode.
Original language | English |
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Pages (from-to) | 14-20 |
Number of pages | 7 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 118 |
DOIs | |
State | Published - Jul 2018 |
Keywords
- Monopolar transport phenomena
- Ohmic contacts
- Schottky diode