TY - GEN
T1 - Physical property analysis of C-doped GaAs as function of the carrier concentration grown by MOCVD using elemental arsenic as precursor
AU - Díaz-Reyes, J.
AU - Avendaño, M. A.
AU - Galván-Arellano, M.
AU - Peña-Sierra, R.
PY - 2006/3
Y1 - 2006/3
N2 - This work presents the characterization of GaAs layers grown in a metallic-arsenic-based-MOCVD system. The gallium precursor was the compound trimethylgallium (TMG) and elemental arsenic as precursor of arsenic. The most important parameters of the growth process include the substrate temperature and the composition of the carrier gas; an N2 + H2 gas mixture. The influence of carbon doping on the optical and electrical properties of GaAs layers have been studied by photoluminescence (PL) spectroscopy, Photoreflectance (PR) and Hall Effect measurements. To carry out doping with carbon in the range of around 1016 to 1020 cm-3, it was necessary to modifying the hydrogen activity in the reacting atmosphere with the control of the N2+H2, mixture which was used as carrier gas. The PL response of the samples is strongly dependent on the growth temperature and showed mainly two radiative transitions, band-to-band and band-to C-acceptor. PR spectra present transitions associated to GaAs. Besides, short period oscillations near the GaAs band-gap energy are observed, interpreted as Franz-Keldysh oscillations associated to the hole-ionized acceptor (h-A-) pair modulations. For investigating the chemical bonds of impurity-related species in the GaAs layers optical absorption was measured using a FT-IR spectrometer. Device quality GaAs layers have been grown in a broad range of growth temperatures.
AB - This work presents the characterization of GaAs layers grown in a metallic-arsenic-based-MOCVD system. The gallium precursor was the compound trimethylgallium (TMG) and elemental arsenic as precursor of arsenic. The most important parameters of the growth process include the substrate temperature and the composition of the carrier gas; an N2 + H2 gas mixture. The influence of carbon doping on the optical and electrical properties of GaAs layers have been studied by photoluminescence (PL) spectroscopy, Photoreflectance (PR) and Hall Effect measurements. To carry out doping with carbon in the range of around 1016 to 1020 cm-3, it was necessary to modifying the hydrogen activity in the reacting atmosphere with the control of the N2+H2, mixture which was used as carrier gas. The PL response of the samples is strongly dependent on the growth temperature and showed mainly two radiative transitions, band-to-band and band-to C-acceptor. PR spectra present transitions associated to GaAs. Besides, short period oscillations near the GaAs band-gap energy are observed, interpreted as Franz-Keldysh oscillations associated to the hole-ionized acceptor (h-A-) pair modulations. For investigating the chemical bonds of impurity-related species in the GaAs layers optical absorption was measured using a FT-IR spectrometer. Device quality GaAs layers have been grown in a broad range of growth temperatures.
UR - http://www.scopus.com/inward/record.url?scp=33744926909&partnerID=8YFLogxK
U2 - 10.1051/jp4:2006132055
DO - 10.1051/jp4:2006132055
M3 - Contribución a la conferencia
AN - SCOPUS:33744926909
SN - 2868839185
SN - 9782868839183
T3 - Journal De Physique. IV : JP
SP - 291
EP - 294
BT - Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
T2 - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Y2 - 3 July 2005 through 8 July 2005
ER -