Physical properties of transparent conducting Cd-Te-In-O thin films. Outlining a thermodynamic system for transparent conducting oxides

A. Martel; F. Caballero-Briones; R. Castro-Rodríguez; J. Méndez-Gamboa; N. Romeo; A. Bosio; J. L. Peña

doi:10.1016/j.tsf.2009.06.046

Physical properties of transparent conducting Cd-Te-In-O thin films. Outlining a thermodynamic system for transparent conducting oxides

A. Martel, F. Caballero-Briones, R. Castro-Rodríguez, J. Méndez-Gamboa, N. Romeo, A. Bosio, J. L. Peña

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Cd-Te-In-O thin films are grown by pulsed laser deposition using a composite target of CdTe powder embedded in an indium matrix. Oxygen pressures range from 2.00 to 6.67 Pa at a substrate temperature of 420 °C. The structure, optical transmission and sheet resistance of the films are measured. Substitutional compounds with In_{2 - 2x}(Cd,Te)_2xO₃ stoichiometry are found at high oxygen pressures. A ternary phase diagram of the CdO-In₂O₃-TeO₂ system shows the relationship between the structure and the stoichiometry of the films. To evaluate film performance, a figure of merit is proposed based on the relationship between the integral photonic flux and the sheet resistance. The best figure of merit values corresponds to a sample prepared at 3.8 Pa O₂ that consists of (In₂O₃)_0.3(CdTe₂O₅)_0.7 and exhibits an optical band gap of 3.0 eV. This sample is a suitable substrate for electrodeposition due to its good electrochemical stability.

Original language	English
Pages (from-to)	413-418
Number of pages	6
Journal	Thin Solid Films
Volume	518
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2009.06.046
State	Published - 2 Nov 2009
Externally published	Yes

Keywords

CdO-TeO-InO
Figure of merit
ICTO
PLD
Phase diagram
Solar cells
TCO

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10.1016/j.tsf.2009.06.046

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@article{0db46e8a5a5847c2a84be94b65471775,

title = "Physical properties of transparent conducting Cd-Te-In-O thin films. Outlining a thermodynamic system for transparent conducting oxides",

abstract = "Cd-Te-In-O thin films are grown by pulsed laser deposition using a composite target of CdTe powder embedded in an indium matrix. Oxygen pressures range from 2.00 to 6.67 Pa at a substrate temperature of 420 °C. The structure, optical transmission and sheet resistance of the films are measured. Substitutional compounds with In2 - 2x(Cd,Te)2xO3 stoichiometry are found at high oxygen pressures. A ternary phase diagram of the CdO-In2O3-TeO2 system shows the relationship between the structure and the stoichiometry of the films. To evaluate film performance, a figure of merit is proposed based on the relationship between the integral photonic flux and the sheet resistance. The best figure of merit values corresponds to a sample prepared at 3.8 Pa O2 that consists of (In2O3)0.3(CdTe2O5)0.7 and exhibits an optical band gap of 3.0 eV. This sample is a suitable substrate for electrodeposition due to its good electrochemical stability.",

keywords = "CdO-TeO-InO, Figure of merit, ICTO, PLD, Phase diagram, Solar cells, TCO",

author = "A. Martel and F. Caballero-Briones and R. Castro-Rodr{\'i}guez and J. M{\'e}ndez-Gamboa and N. Romeo and A. Bosio and Pe{\~n}a, {J. L.}",

note = "Funding Information: The experimental work was done in the New Materials Group facilities at CINVESTAV-IPN Unidad M{\'e}rida, and was supported by Project No. 59996 CONACyT/M{\'e}xico. The authors acknowledge photovoltaics expert Dr. Ralph Romero, (Williamsburg, VA, USA) for his review of the manuscript, Oswaldo G{\'o}mez, Mario Herrera and Roberto S{\'a}nchez for technical support and Lourdes Pinelo for secretarial assistance. FCB acknowledges financial support from Instituto Polit{\'e}cnico Nacional-M{\'e}xico through EDI and SIBE grants.",

year = "2009",

month = nov,

day = "2",

doi = "10.1016/j.tsf.2009.06.046",

language = "Ingl{\'e}s",

volume = "518",

pages = "413--418",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1",

}

TY - JOUR

T1 - Physical properties of transparent conducting Cd-Te-In-O thin films. Outlining a thermodynamic system for transparent conducting oxides

AU - Martel, A.

AU - Caballero-Briones, F.

AU - Castro-Rodríguez, R.

AU - Méndez-Gamboa, J.

AU - Romeo, N.

AU - Bosio, A.

AU - Peña, J. L.

N1 - Funding Information: The experimental work was done in the New Materials Group facilities at CINVESTAV-IPN Unidad Mérida, and was supported by Project No. 59996 CONACyT/México. The authors acknowledge photovoltaics expert Dr. Ralph Romero, (Williamsburg, VA, USA) for his review of the manuscript, Oswaldo Gómez, Mario Herrera and Roberto Sánchez for technical support and Lourdes Pinelo for secretarial assistance. FCB acknowledges financial support from Instituto Politécnico Nacional-México through EDI and SIBE grants.

PY - 2009/11/2

Y1 - 2009/11/2

N2 - Cd-Te-In-O thin films are grown by pulsed laser deposition using a composite target of CdTe powder embedded in an indium matrix. Oxygen pressures range from 2.00 to 6.67 Pa at a substrate temperature of 420 °C. The structure, optical transmission and sheet resistance of the films are measured. Substitutional compounds with In2 - 2x(Cd,Te)2xO3 stoichiometry are found at high oxygen pressures. A ternary phase diagram of the CdO-In2O3-TeO2 system shows the relationship between the structure and the stoichiometry of the films. To evaluate film performance, a figure of merit is proposed based on the relationship between the integral photonic flux and the sheet resistance. The best figure of merit values corresponds to a sample prepared at 3.8 Pa O2 that consists of (In2O3)0.3(CdTe2O5)0.7 and exhibits an optical band gap of 3.0 eV. This sample is a suitable substrate for electrodeposition due to its good electrochemical stability.

AB - Cd-Te-In-O thin films are grown by pulsed laser deposition using a composite target of CdTe powder embedded in an indium matrix. Oxygen pressures range from 2.00 to 6.67 Pa at a substrate temperature of 420 °C. The structure, optical transmission and sheet resistance of the films are measured. Substitutional compounds with In2 - 2x(Cd,Te)2xO3 stoichiometry are found at high oxygen pressures. A ternary phase diagram of the CdO-In2O3-TeO2 system shows the relationship between the structure and the stoichiometry of the films. To evaluate film performance, a figure of merit is proposed based on the relationship between the integral photonic flux and the sheet resistance. The best figure of merit values corresponds to a sample prepared at 3.8 Pa O2 that consists of (In2O3)0.3(CdTe2O5)0.7 and exhibits an optical band gap of 3.0 eV. This sample is a suitable substrate for electrodeposition due to its good electrochemical stability.

KW - CdO-TeO-InO

KW - Figure of merit

KW - ICTO

KW - PLD

KW - Phase diagram

KW - Solar cells

KW - TCO

UR - http://www.scopus.com/inward/record.url?scp=69549133616&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.06.046

DO - 10.1016/j.tsf.2009.06.046

M3 - Artículo

SN - 0040-6090

VL - 518

SP - 413

EP - 418

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Physical properties of transparent conducting Cd-Te-In-O thin films. Outlining a thermodynamic system for transparent conducting oxides

Abstract

Keywords

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