TY - JOUR
T1 - Physical properties of CdTe:Cu films grown at low temperature by pulsed laser deposition
AU - De Moure-Flores, F.
AU - Quiñones-Galván, J. G.
AU - Guillén-Cervantes, A.
AU - Arias-Cerón, J. S.
AU - Contreras-Puente, G.
AU - Hernández-Hernández, A.
AU - Santoyo-Salazar, J.
AU - De La, M.
AU - Santana-Aranda, M. A.
AU - Zapata-Torres, M.
AU - Mendoza-Álvarez, J. G.
AU - Meléndez-Lira, M.
N1 - Funding Information:
We acknowledge the technical support of Marcela Guerrero, A. García-Sotelo, and Zacarías Rivera from the Physics Department, CINVESTAV-IPN, and the partial support by CONACyT-México.
PY - 2012/12/1
Y1 - 2012/12/1
N2 - CdTe:Cu films were grown by pulsed laser deposition on Corning glass slides at a substrate temperature of 300°C. The thin films were grown using CdTe and Cu2Te powders, varying the Cu2Te concentration from 3 to 10wt. %. The structural, compositional, optical, and electrical properties were analyzed as a function of the nominal copper concentration. X-ray diffraction shows that films have CdTe cubic phase. The compositional analysis indicates that CdTe:Cu films grown with lower Cu content have Te excess, on the other hand, films with higher Cu content have Te deficiencies. The electrical measurements showed that CdTe:Cu films grown with low Cu content present lowest resistivity.
AB - CdTe:Cu films were grown by pulsed laser deposition on Corning glass slides at a substrate temperature of 300°C. The thin films were grown using CdTe and Cu2Te powders, varying the Cu2Te concentration from 3 to 10wt. %. The structural, compositional, optical, and electrical properties were analyzed as a function of the nominal copper concentration. X-ray diffraction shows that films have CdTe cubic phase. The compositional analysis indicates that CdTe:Cu films grown with lower Cu content have Te excess, on the other hand, films with higher Cu content have Te deficiencies. The electrical measurements showed that CdTe:Cu films grown with low Cu content present lowest resistivity.
UR - http://www.scopus.com/inward/record.url?scp=84871188237&partnerID=8YFLogxK
U2 - 10.1063/1.4768455
DO - 10.1063/1.4768455
M3 - Artículo
SN - 0021-8979
VL - 112
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
M1 - 113110
ER -