Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

O. Vigil-Galán, E. Sánchez-Meza, C. M. Ruiz, J. Sastré-Hernández, A. Morales-Acevedo, F. Cruz-Gandarilla, J. Aguilar-Hernández, E. Saucedo, G. Contreras-Puente, V. Bermúdez

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (Jsc), open circuit voltage (VOC), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed.

Original languageEnglish
Pages (from-to)5819-5823
Number of pages5
JournalThin Solid Films
Volume515
Issue number15 SPEC. ISS.
DOIs
StatePublished - 31 May 2007

Keywords

  • CSVT growth method
  • CdTe:Bi thin films
  • Physical properties
  • Solar cells

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