@inproceedings{6634373f0b124ac2813699df26520a28,
title = "Photoresponse analysis of sensors fabricated with standard 2.0 μm CMOS technology",
abstract = "This paper reports the fabrication and optical characterizations of CMOS sensors type junction, for two different geometries L and square, with areas 112×100 μm2 and 120×120 μm2, respectively. The sensor element is a photodiode implemented with n-well, using a CMOS process based on 2μm technology. An increase in the device photocurrent is observed when the reverse bias is increased. A wavelength shift for the maximum photocurrent peak was observed in the CMOS sensors after applying a bias voltage. Preliminary results indicate that sensors with more vertices exhibit a higher wavelength shift. This behavior could arise from both the changes in the depletion width and the effective device area. The output of the reverse-biased sensors is extremely linear with respect to the applied light intensity. Both responsivity and quantum efficiency exhibit a maximum peak at = 500 nm with values of 38 mA/W and 10.2 %, respectively.",
author = "Mestanza, {S. N.M.} and E. Rodriguez and I. Doi and Diniz, {J. A.} and Swart, {J. W.} and Frateschi, {N. C.}",
year = "2007",
doi = "10.1149/1.2766929",
language = "Ingl{\'e}s",
isbn = "9781566775656",
series = "ECS Transactions",
number = "1",
pages = "553--560",
booktitle = "ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007",
edition = "1",
note = "22nd Symposium on Microelectronics Technology and Devices, SBMicro2007 ; Conference date: 03-09-2007 Through 06-09-2007",
}