Photoluminescence study of an ultrathin strained silicon on insulator layer

J. Munguía; G. Bremond; J. De La Torre; J. M. Bluet

doi:10.1063/1.2432290

Photoluminescence study of an ultrathin strained silicon on insulator layer

J. Munguía, G. Bremond, J. De La Torre, J. M. Bluet

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Abstract

Low temperature photoluminescence has been performed in order to analyze the strain effect on the Si band structure for an 8 nm thick tensile strained silicon layer on insulator. The authors show three phonon assisted optical transitions related to the strained silicon top layer at 0.923, 0.983, and 1.022 eV. The 0.983 eV line of the TO phonon assisted transition corresponds to a 115 meV strain induced band gap shrinkage at Δ point which agrees with the calculated values of strained silicon band gap.

Original language	English
Article number	042110
Journal	Applied Physics Letters
Volume	90
Issue number	4
DOIs	https://doi.org/10.1063/1.2432290
State	Published - 2007
Externally published	Yes

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title = "Photoluminescence study of an ultrathin strained silicon on insulator layer",

abstract = "Low temperature photoluminescence has been performed in order to analyze the strain effect on the Si band structure for an 8 nm thick tensile strained silicon layer on insulator. The authors show three phonon assisted optical transitions related to the strained silicon top layer at 0.923, 0.983, and 1.022 eV. The 0.983 eV line of the TO phonon assisted transition corresponds to a 115 meV strain induced band gap shrinkage at Δ point which agrees with the calculated values of strained silicon band gap.",

author = "J. Mungu{\'i}a and G. Bremond and {De La Torre}, J. and Bluet, {J. M.}",

note = "Funding Information: This work was partially supported by CONACYT grant program and the MEDEA 2T 101 in the frame of the CEA-LETI/LPM collaboration. The authors thank SOITEC for sample preparation.",

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doi = "10.1063/1.2432290",

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T1 - Photoluminescence study of an ultrathin strained silicon on insulator layer

AU - Munguía, J.

AU - Bremond, G.

AU - De La Torre, J.

AU - Bluet, J. M.

N1 - Funding Information: This work was partially supported by CONACYT grant program and the MEDEA 2T 101 in the frame of the CEA-LETI/LPM collaboration. The authors thank SOITEC for sample preparation.

PY - 2007

Y1 - 2007

N2 - Low temperature photoluminescence has been performed in order to analyze the strain effect on the Si band structure for an 8 nm thick tensile strained silicon layer on insulator. The authors show three phonon assisted optical transitions related to the strained silicon top layer at 0.923, 0.983, and 1.022 eV. The 0.983 eV line of the TO phonon assisted transition corresponds to a 115 meV strain induced band gap shrinkage at Δ point which agrees with the calculated values of strained silicon band gap.

AB - Low temperature photoluminescence has been performed in order to analyze the strain effect on the Si band structure for an 8 nm thick tensile strained silicon layer on insulator. The authors show three phonon assisted optical transitions related to the strained silicon top layer at 0.923, 0.983, and 1.022 eV. The 0.983 eV line of the TO phonon assisted transition corresponds to a 115 meV strain induced band gap shrinkage at Δ point which agrees with the calculated values of strained silicon band gap.

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U2 - 10.1063/1.2432290

DO - 10.1063/1.2432290

M3 - Artículo

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042110

ER -

Photoluminescence study of an ultrathin strained silicon on insulator layer

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