Photoluminescence studies of semiconducting polycrystalline cdte films

Jorge Aguilar-Hernández; Gerardo Contreras-Puente; Juan Manuel Figueroa Estrada Zelaya-Angel

doi:10.1143/JJAP.33.37

Photoluminescence studies of semiconducting polycrystalline cdte films

Jorge Aguilar-Hernández, Gerardo Contreras-Puente, Juan Manuel Figueroa Estrada Zelaya-Angel

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report the first systematic measurements of the temperature dependence of the photoluminescence (PL) in the range of 10–300 K in CdTe. The experiments were carried out on semiconducting CdTe films of high quality grown by a modified close-spaced vapour transport (CSVT) technique. Several luminescence bands were observed, one around 1.4 eV showing a temperature-independent behaviour, and another band located around 1.52 eV, at 300 K, showing a strong temperature dependence. The excitonic origin of this band at low temperatures has been confirmed by the dependence of the PL intensity on the excitation intensity. A band-to-band luminescent recombination component at high temperatures is also observed. This study allows us to elucidate the nature and basic physical properties of the bound exciton as well as the temperature dependence of the band gap.

Original language	English
Pages (from-to)	37
Number of pages	1
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	1R
DOIs	https://doi.org/10.1143/JJAP.33.37
State	Published - Jan 1994
Externally published	Yes

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title = "Photoluminescence studies of semiconducting polycrystalline cdte films",

abstract = "We report the first systematic measurements of the temperature dependence of the photoluminescence (PL) in the range of 10–300 K in CdTe. The experiments were carried out on semiconducting CdTe films of high quality grown by a modified close-spaced vapour transport (CSVT) technique. Several luminescence bands were observed, one around 1.4 eV showing a temperature-independent behaviour, and another band located around 1.52 eV, at 300 K, showing a strong temperature dependence. The excitonic origin of this band at low temperatures has been confirmed by the dependence of the PL intensity on the excitation intensity. A band-to-band luminescent recombination component at high temperatures is also observed. This study allows us to elucidate the nature and basic physical properties of the bound exciton as well as the temperature dependence of the band gap.",

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T1 - Photoluminescence studies of semiconducting polycrystalline cdte films

AU - Aguilar-Hernández, Jorge

AU - Contreras-Puente, Gerardo

AU - Zelaya-Angel, Juan Manuel Figueroa Estrada

PY - 1994/1

Y1 - 1994/1

N2 - We report the first systematic measurements of the temperature dependence of the photoluminescence (PL) in the range of 10–300 K in CdTe. The experiments were carried out on semiconducting CdTe films of high quality grown by a modified close-spaced vapour transport (CSVT) technique. Several luminescence bands were observed, one around 1.4 eV showing a temperature-independent behaviour, and another band located around 1.52 eV, at 300 K, showing a strong temperature dependence. The excitonic origin of this band at low temperatures has been confirmed by the dependence of the PL intensity on the excitation intensity. A band-to-band luminescent recombination component at high temperatures is also observed. This study allows us to elucidate the nature and basic physical properties of the bound exciton as well as the temperature dependence of the band gap.

AB - We report the first systematic measurements of the temperature dependence of the photoluminescence (PL) in the range of 10–300 K in CdTe. The experiments were carried out on semiconducting CdTe films of high quality grown by a modified close-spaced vapour transport (CSVT) technique. Several luminescence bands were observed, one around 1.4 eV showing a temperature-independent behaviour, and another band located around 1.52 eV, at 300 K, showing a strong temperature dependence. The excitonic origin of this band at low temperatures has been confirmed by the dependence of the PL intensity on the excitation intensity. A band-to-band luminescent recombination component at high temperatures is also observed. This study allows us to elucidate the nature and basic physical properties of the bound exciton as well as the temperature dependence of the band gap.

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U2 - 10.1143/JJAP.33.37

DO - 10.1143/JJAP.33.37

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SN - 0021-4922

VL - 33

SP - 37

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1R

ER -

Photoluminescence studies of semiconducting polycrystalline cdte films

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