TY - JOUR
T1 - Photoluminescence studies of CdS thin films annealed in CdCl2 atmosphere
AU - Aguilar-Hernández, J.
AU - Sastré-Hernández, J.
AU - Mendoza-Pérez, R.
AU - Contreras-Puente, G.
AU - Cárdenas-García, M.
AU - Ortiz-López, J.
N1 - Funding Information:
Work partially supported by CONACyT-Mexico and CGPI-IPN, through Grant CONACyT: I39214-U and CGPI: 20020912, respectively.
PY - 2006/4/14
Y1 - 2006/4/14
N2 - We have grown CdS films by the Close Spaced Vapor Transport technique under specific conditions: substrate temperature (Ts): 450 °C, source temperature (Tso): 725 °C, argon pressure in the chamber (PAr): 100, 200 and 500 mT, deposition time (td): 100 s. The films were studied by measuring the luminescence properties at different temperatures in the range 10-300 K. The room-temperature PL spectrum of the as-grown CdS films showed a very broad band centered at 2.26 eV and a shoulder in the low-energy side at 1.80 eV. After CdCl2 thermal annealing at 300 K, the spectrum showed better PL characteristics: a strong band in the low-energy side at 1.67 eV and a band in the high-energy side at 2.47 eV. The analysis at lower temperatures showed that the high-energy band becomes most intense and shifts to higher energies reaching a value of 2.54 eV, very close to the energy band gap at 10 K. The low-energy band becomes broader and centered around 1.9 eV. Analysis of the PL intensity as a function of temperature in an Arrhenius representation, allows applying a theoretical model for the quenching of the PL intensity.
AB - We have grown CdS films by the Close Spaced Vapor Transport technique under specific conditions: substrate temperature (Ts): 450 °C, source temperature (Tso): 725 °C, argon pressure in the chamber (PAr): 100, 200 and 500 mT, deposition time (td): 100 s. The films were studied by measuring the luminescence properties at different temperatures in the range 10-300 K. The room-temperature PL spectrum of the as-grown CdS films showed a very broad band centered at 2.26 eV and a shoulder in the low-energy side at 1.80 eV. After CdCl2 thermal annealing at 300 K, the spectrum showed better PL characteristics: a strong band in the low-energy side at 1.67 eV and a band in the high-energy side at 2.47 eV. The analysis at lower temperatures showed that the high-energy band becomes most intense and shifts to higher energies reaching a value of 2.54 eV, very close to the energy band gap at 10 K. The low-energy band becomes broader and centered around 1.9 eV. Analysis of the PL intensity as a function of temperature in an Arrhenius representation, allows applying a theoretical model for the quenching of the PL intensity.
KW - CdS
KW - Exciton band
KW - Photoluminescence
KW - Temperature dependence
KW - CDS
KW - banda de excitón
KW - fotoluminiscencia
KW - Dependencia de la temperatura
UR - http://www.scopus.com/inward/record.url?scp=32844473614&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2005.04.007
DO - 10.1016/j.solmat.2005.04.007
M3 - Artículo
AN - SCOPUS:32844473614
SN - 0927-0248
VL - 90
SP - 704
EP - 712
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 6 SPEC. ISS.
ER -