Photoluminescence of Si nanocrystallites in different types of matrices

T. V. Torchynska

doi:10.1016/j.jnoncrysol.2006.03.022

Photoluminescence of Si nanocrystallites in different types of matrices

T. V. Torchynska

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

This paper presents the comparative investigation of photoluminescence (PL) and its temperature dependence for rf-magnetron co-sputtered Si-enriched SiO_x systems and amorphous Si films prepared by hot-wire CVD method with Si nanocrystallites of different sizes. It is shown that PL spectra of Si-SiO_x films consist of the five PL bands peaked at 1.30, 1.50, 1.76, 2.05 and 2.32 eV. Amorphous Si films with Si nanocrystallites are characterized by three PL bands only peaked at 1.35, 1.50 and 1.76 eV. The peak position of the 1.50 eV PL band shifts with the change of Si quantum dot sizes and it is attributed to exciton recombination inside of Si quantum dots. The nature of four other PL bands is discussed as well.

Original language	English
Pages (from-to)	2484-2487
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	352
Issue number	23-25
DOIs	https://doi.org/10.1016/j.jnoncrysol.2006.03.022
State	Published - 15 Jul 2006

Keywords

Composition
Luminescence
Nanoclusters
Nanocrystals
Optical properties
Silicon

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10.1016/j.jnoncrysol.2006.03.022

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title = "Photoluminescence of Si nanocrystallites in different types of matrices",

abstract = "This paper presents the comparative investigation of photoluminescence (PL) and its temperature dependence for rf-magnetron co-sputtered Si-enriched SiOx systems and amorphous Si films prepared by hot-wire CVD method with Si nanocrystallites of different sizes. It is shown that PL spectra of Si-SiOx films consist of the five PL bands peaked at 1.30, 1.50, 1.76, 2.05 and 2.32 eV. Amorphous Si films with Si nanocrystallites are characterized by three PL bands only peaked at 1.35, 1.50 and 1.76 eV. The peak position of the 1.50 eV PL band shifts with the change of Si quantum dot sizes and it is attributed to exciton recombination inside of Si quantum dots. The nature of four other PL bands is discussed as well.",

keywords = "Composition, Luminescence, Nanoclusters, Nanocrystals, Optical properties, Silicon",

author = "Torchynska, {T. V.}",

note = "Funding Information: The work was supported by CONACYT-NSF program, project N 42436-Y, and by CGPI-IPN Mexico. The author thanks Dr Y. Matsumoto from CINVESTAV-IPN, Mexico for growing the studded amorphous silicon films and Dr J. Jedrzejewskii from Hebrew University Jerusalem, Israel for growing the studded Si-rich-SiO x systems. ",

year = "2006",

month = jul,

day = "15",

doi = "10.1016/j.jnoncrysol.2006.03.022",

language = "Ingl{\'e}s",

volume = "352",

pages = "2484--2487",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

number = "23-25",

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TY - JOUR

T1 - Photoluminescence of Si nanocrystallites in different types of matrices

AU - Torchynska, T. V.

N1 - Funding Information: The work was supported by CONACYT-NSF program, project N 42436-Y, and by CGPI-IPN Mexico. The author thanks Dr Y. Matsumoto from CINVESTAV-IPN, Mexico for growing the studded amorphous silicon films and Dr J. Jedrzejewskii from Hebrew University Jerusalem, Israel for growing the studded Si-rich-SiO x systems.

PY - 2006/7/15

Y1 - 2006/7/15

N2 - This paper presents the comparative investigation of photoluminescence (PL) and its temperature dependence for rf-magnetron co-sputtered Si-enriched SiOx systems and amorphous Si films prepared by hot-wire CVD method with Si nanocrystallites of different sizes. It is shown that PL spectra of Si-SiOx films consist of the five PL bands peaked at 1.30, 1.50, 1.76, 2.05 and 2.32 eV. Amorphous Si films with Si nanocrystallites are characterized by three PL bands only peaked at 1.35, 1.50 and 1.76 eV. The peak position of the 1.50 eV PL band shifts with the change of Si quantum dot sizes and it is attributed to exciton recombination inside of Si quantum dots. The nature of four other PL bands is discussed as well.

AB - This paper presents the comparative investigation of photoluminescence (PL) and its temperature dependence for rf-magnetron co-sputtered Si-enriched SiOx systems and amorphous Si films prepared by hot-wire CVD method with Si nanocrystallites of different sizes. It is shown that PL spectra of Si-SiOx films consist of the five PL bands peaked at 1.30, 1.50, 1.76, 2.05 and 2.32 eV. Amorphous Si films with Si nanocrystallites are characterized by three PL bands only peaked at 1.35, 1.50 and 1.76 eV. The peak position of the 1.50 eV PL band shifts with the change of Si quantum dot sizes and it is attributed to exciton recombination inside of Si quantum dots. The nature of four other PL bands is discussed as well.

KW - Composition

KW - Luminescence

KW - Nanoclusters

KW - Nanocrystals

KW - Optical properties

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=33746849296&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2006.03.022

DO - 10.1016/j.jnoncrysol.2006.03.022

M3 - Artículo

SN - 0022-3093

VL - 352

SP - 2484

EP - 2487

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 23-25

ER -

Photoluminescence of Si nanocrystallites in different types of matrices

Abstract

Keywords

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