TY - JOUR
T1 - Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer
AU - Cisneros Tamayo, R.
AU - Torchynska, T. V.
AU - Polupan, G.
AU - Guerrero Moreno, I. J.
AU - Velázquez Lozada, E.
AU - Shcherbyna, L.
N1 - Funding Information:
The authors would like to thank the CONACYT (project 130387 ) and SIP-IPN, Mexico, for the financial support, as well as the Dr. Andreas Stintz from the Center of High Technology Materials at New Mexico University, Albuquerque, USA, for growing the studied QD structures and Dr. J.L. Casas Espinola for photoluminescence measurements.
PY - 2014/7
Y1 - 2014/7
N2 - Photoluminescence (PL) of InAs quantum dots (QDs) embedded in the Al 0.30Ga0.70As/In0.15Ga0.85As/ InGaAlAs/GaAs quantum wells (QWs) have been investigated in the temperature range of 10-500 K for as grown samples and after thermal annealing at 640 °C or 710°C for two hours. QD samples with the different InAlGaAs capping layers (GaAs or Al0.1Ga0.75 In0.15As) have been studied. The higher PL intensity and lower energy of ground state (GS) emission are detected in the structure with Al0.1Ga0.75 In 0.15As layer. This QD structure in as grown state has smaller PL thermal decay in comparison with this parameter in the structure with GaAs layer. The variation of PL intensities and peak positions at annealing are more essential in the QD structure with Al0.1Ga0.75 In 0.15As capping layer, apparently, due to more efficient Ga(Al)/In intermixing.
AB - Photoluminescence (PL) of InAs quantum dots (QDs) embedded in the Al 0.30Ga0.70As/In0.15Ga0.85As/ InGaAlAs/GaAs quantum wells (QWs) have been investigated in the temperature range of 10-500 K for as grown samples and after thermal annealing at 640 °C or 710°C for two hours. QD samples with the different InAlGaAs capping layers (GaAs or Al0.1Ga0.75 In0.15As) have been studied. The higher PL intensity and lower energy of ground state (GS) emission are detected in the structure with Al0.1Ga0.75 In 0.15As layer. This QD structure in as grown state has smaller PL thermal decay in comparison with this parameter in the structure with GaAs layer. The variation of PL intensities and peak positions at annealing are more essential in the QD structure with Al0.1Ga0.75 In 0.15As capping layer, apparently, due to more efficient Ga(Al)/In intermixing.
KW - Ga(Al)/In inter diffusion
KW - InAs quantum dots
KW - InGaAlAs strain reducing layer
KW - Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=84898948978&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2014.03.024
DO - 10.1016/j.spmi.2014.03.024
M3 - Artículo
SN - 0749-6036
VL - 71
SP - 168
EP - 176
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
ER -