Photoluminescence of Ge nano-crystallites embedded in silicon oxide

T. V. Torchynska; G. Polupan; J. Palacios Gomez; A. V. Kolobov

doi:10.1016/S0026-2692(03)00043-0

Photoluminescence of Ge nano-crystallites embedded in silicon oxide

T. V. Torchynska, G. Polupan, J. Palacios Gomez, A. V. Kolobov

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Silicon oxide films enriched by Ge in as-grown state was investigated after their thermal annealing at 800 °C. The dependences of photoluminescence (PL) peculiarities on the concentration of Ge and on the existence of Ge nano-crystallites in silicon oxide films were analyzed. It was found that annealing at 800 °C during 1h initiated a shift of the maximum of the PL band to a higher energy.

Translated title of the contribution	Fotoluminiscencia de nanocristalitos de Ge incrustados en óxido de silicio
Original language	English
Pages (from-to)	541-543
Number of pages	3
Journal	Microelectronics Journal
Volume	34
Issue number	5-8
DOIs	https://doi.org/10.1016/S0026-2692(03)00043-0
State	Published - May 2003

Keywords

Nano-crystallites
Photoluminescence
Transmission electron microscopy

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10.1016/S0026-2692(03)00043-0

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@article{8766d1670515412899f87ae819cfc701,

title = "Photoluminescence of Ge nano-crystallites embedded in silicon oxide",

abstract = "Silicon oxide films enriched by Ge in as-grown state was investigated after their thermal annealing at 800 °C. The dependences of photoluminescence (PL) peculiarities on the concentration of Ge and on the existence of Ge nano-crystallites in silicon oxide films were analyzed. It was found that annealing at 800 °C during 1h initiated a shift of the maximum of the PL band to a higher energy.",

keywords = "Nano-crystallites, Photoluminescence, Transmission electron microscopy",

author = "Torchynska, {T. V.} and G. Polupan and {Palacios Gomez}, J. and Kolobov, {A. V.}",

note = "Funding Information: This work was partially supported by CONACYT (Projects 33427-U) and CGPI-IPN Mexico. The authors thank J. Aquilar Hernandez for the measurement of photoluminescence spectra.",

year = "2003",

month = may,

doi = "10.1016/S0026-2692(03)00043-0",

language = "Ingl{\'e}s",

volume = "34",

pages = "541--543",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

number = "5-8",

}

TY - JOUR

T1 - Photoluminescence of Ge nano-crystallites embedded in silicon oxide

AU - Torchynska, T. V.

AU - Polupan, G.

AU - Palacios Gomez, J.

AU - Kolobov, A. V.

N1 - Funding Information: This work was partially supported by CONACYT (Projects 33427-U) and CGPI-IPN Mexico. The authors thank J. Aquilar Hernandez for the measurement of photoluminescence spectra.

PY - 2003/5

Y1 - 2003/5

N2 - Silicon oxide films enriched by Ge in as-grown state was investigated after their thermal annealing at 800 °C. The dependences of photoluminescence (PL) peculiarities on the concentration of Ge and on the existence of Ge nano-crystallites in silicon oxide films were analyzed. It was found that annealing at 800 °C during 1h initiated a shift of the maximum of the PL band to a higher energy.

AB - Silicon oxide films enriched by Ge in as-grown state was investigated after their thermal annealing at 800 °C. The dependences of photoluminescence (PL) peculiarities on the concentration of Ge and on the existence of Ge nano-crystallites in silicon oxide films were analyzed. It was found that annealing at 800 °C during 1h initiated a shift of the maximum of the PL band to a higher energy.

KW - Nano-crystallites

KW - Photoluminescence

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=0038180611&partnerID=8YFLogxK

U2 - 10.1016/S0026-2692(03)00043-0

DO - 10.1016/S0026-2692(03)00043-0

M3 - Artículo

AN - SCOPUS:0038180611

SN - 0026-2692

VL - 34

SP - 541

EP - 543

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 5-8

ER -

Photoluminescence of Ge nano-crystallites embedded in silicon oxide

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Keywords

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