Photoluminescence mapping study of InAs/InGaAs quantum dot nanostructures

L. Castañeda; E. Austria-Aguilar

doi:10.1166/jno.2014.1631

Photoluminescence mapping study of InAs/InGaAs quantum dot nanostructures

L. Castañeda, E. Austria-Aguilar

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Spatial resolved photoluminescence (PL) spectroscopy have been performed in self-assembled InAs quantum dots (QDs) which were embedded into Molecular Beam Epitaxy (MBE) grown In_0.15 Ga_0.85 As/GaAs multi-quantum-well heterostructures; those materials were currently used for the creation of new laser's generation of optical fiber communication. A strong inhomogeneity of the PL intensity was observed by mapping samples with different In/Ga composition on the layers which were covered by quantum dots in the quantum well. There are two different behaviors on the quantum dot PL maps, that were clearly observed and identified: (1) a reduction of the PL intensity was accompanied by a monotonous "blue" shift of the maximum luminescence at room temperature, and (2) the PL intensity degradation matched a stable peak position of the maximum PL.

Original language	English
Pages (from-to)	538-540
Number of pages	3
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	9
Issue number	4
DOIs	https://doi.org/10.1166/jno.2014.1631
State	Published - 1 Aug 2014

Keywords

III-V semiconductors
Optical properties

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10.1166/jno.2014.1631

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title = "Photoluminescence mapping study of InAs/InGaAs quantum dot nanostructures",

abstract = "Spatial resolved photoluminescence (PL) spectroscopy have been performed in self-assembled InAs quantum dots (QDs) which were embedded into Molecular Beam Epitaxy (MBE) grown In0.15 Ga0.85 As/GaAs multi-quantum-well heterostructures; those materials were currently used for the creation of new laser's generation of optical fiber communication. A strong inhomogeneity of the PL intensity was observed by mapping samples with different In/Ga composition on the layers which were covered by quantum dots in the quantum well. There are two different behaviors on the quantum dot PL maps, that were clearly observed and identified: (1) a reduction of the PL intensity was accompanied by a monotonous {"}blue{"} shift of the maximum luminescence at room temperature, and (2) the PL intensity degradation matched a stable peak position of the maximum PL.",

keywords = "III-V semiconductors, Optical properties",

author = "L. Casta{\~n}eda and E. Austria-Aguilar",

note = "Publisher Copyright: Copyright {\textcopyright} 2014 American Scientific Publishers",

year = "2014",

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doi = "10.1166/jno.2014.1631",

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AU - Castañeda, L.

AU - Austria-Aguilar, E.

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N2 - Spatial resolved photoluminescence (PL) spectroscopy have been performed in self-assembled InAs quantum dots (QDs) which were embedded into Molecular Beam Epitaxy (MBE) grown In0.15 Ga0.85 As/GaAs multi-quantum-well heterostructures; those materials were currently used for the creation of new laser's generation of optical fiber communication. A strong inhomogeneity of the PL intensity was observed by mapping samples with different In/Ga composition on the layers which were covered by quantum dots in the quantum well. There are two different behaviors on the quantum dot PL maps, that were clearly observed and identified: (1) a reduction of the PL intensity was accompanied by a monotonous "blue" shift of the maximum luminescence at room temperature, and (2) the PL intensity degradation matched a stable peak position of the maximum PL.

AB - Spatial resolved photoluminescence (PL) spectroscopy have been performed in self-assembled InAs quantum dots (QDs) which were embedded into Molecular Beam Epitaxy (MBE) grown In0.15 Ga0.85 As/GaAs multi-quantum-well heterostructures; those materials were currently used for the creation of new laser's generation of optical fiber communication. A strong inhomogeneity of the PL intensity was observed by mapping samples with different In/Ga composition on the layers which were covered by quantum dots in the quantum well. There are two different behaviors on the quantum dot PL maps, that were clearly observed and identified: (1) a reduction of the PL intensity was accompanied by a monotonous "blue" shift of the maximum luminescence at room temperature, and (2) the PL intensity degradation matched a stable peak position of the maximum PL.

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DO - 10.1166/jno.2014.1631

M3 - Artículo

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JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

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ER -

Photoluminescence mapping study of InAs/InGaAs quantum dot nanostructures

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