Photoluminescence in nd-doped v₂o₅

Based on the melt-quenching method, V₂O₅ was doped with Nd³⁺ ions. Photoluminescent properties due to electronic transitions of Nd³⁺ were found. In spite of the used method in the fabrication of this material, which consisted in a thermal shock from 1073 to 100 K, all the characterization techniques indicated that V₂O ₅ has a crystalline orthorhombic phase and is acting as a host matrix for the Nd³⁺ ions. For instance, in the X-ray diffraction patterns, only well-defined peaks associated to V₂O₅ were detected. By Raman spectroscopy, vibrational modes related to V₂O₅ were observed. An E_g = 2.15 eV was determined from the optical absorption spectrum for this doped material. Scanning electron microscopy images recorded on a fresh fracture show that this material is formed by lamellar plates. The elemental semi quantitative analysis indicates that the doping level with Nd³⁺ was of the order of 2.0 ± 0.2 at.%. Dark conductivity measurements yielded values in the 10^-6-10^-12 (Ω cm)^-1 range. Finally, by micro photoluminescence spectroscopy, the {⁴F_5/2, ⁴F_3/2} → ⁴I₉/₂ electronic transitions related to Nd³⁺ ions were observed.