Photoluminescence energy trend for ground and excited states in InAs quantum dots in InGaAs/GaAs QW structures

E. Velazquez Lozada, T. V. Torchynska, M. Dybiec, S. Ostapenko, P. G. Eliseev, A. Stintz, K. J. Malloy

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

This paper presents the photoluminescence study at 80K and scanning photoluminescence spectroscopy investigation of the ground and multi excited states at 80 and 300K in InAs quantum dots (QDs) inserted in symmetric In 0.15Ga0.85As/GaAs QW structures created at different QD growth temperatures. It is shown that some of the structures investigated exhibit a spatial long range variation of the average QD size in the QD ensemble across the sample. This long range QD size inhomogeneity was used for an investigation of the multi excited state energy trend versus ground state energy (or QD sizes). Experimental results were compared with the electron-hole level energy trend versus QD size predicted theoretically on the base of the 8-band k·p approach. Some anti correlation between experimental and theoretical results has been revealed and discussed.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number2
DOIs
StatePublished - 2007
EventInternational Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 - Istanbul, Turkey
Duration: 30 Jul 20064 Aug 2006

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