Photoluminescence and X-ray studies of thin layers down to single quantum wells

Alexey V. Svitelskiy; Galina N. Semenova; Vasily P. Klad'ko; Tatyana G. Kryshtab

doi:10.1117/12.226189

Photoluminescence and X-ray studies of thin layers down to single quantum wells

Alexey V. Svitelskiy, Galina N. Semenova, Vasily P. Klad'ko, Tatyana G. Kryshtab

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have demonstrated the capability and limitation of nondestructive photoluminescence and X-ray diffraction tecniques in the characterization of GaAs, AlGaAs, InGaAs matched epitaxial layers grown by molecular beam epitaxy as well as quantum wells grown by metalorganic chemical vapour deposition. The application of the X-ray diffraction and the photoluminescence methods to the same objects made it possible to control Al content in the Al_xGa_1-xAs layers in the range of x (0≤x≤l) and to solve some technological questions connected with layers lateral homogeneity.

Original language	English
Pages (from-to)	325-332
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2648
DOIs	https://doi.org/10.1117/12.226189
State	Published - 3 Nov 1995
Externally published	Yes
Event	International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1995 - Kiev, Ukraine Duration: 11 May 1995 → 13 May 1995

Keywords

Algaas/gaas quantum well
Epilayer
Photoluminescence
X-ray diffraction

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10.1117/12.226189

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title = "Photoluminescence and X-ray studies of thin layers down to single quantum wells",

abstract = "We have demonstrated the capability and limitation of nondestructive photoluminescence and X-ray diffraction tecniques in the characterization of GaAs, AlGaAs, InGaAs matched epitaxial layers grown by molecular beam epitaxy as well as quantum wells grown by metalorganic chemical vapour deposition. The application of the X-ray diffraction and the photoluminescence methods to the same objects made it possible to control Al content in the AlxGa1-xAs layers in the range of x (0≤x≤l) and to solve some technological questions connected with layers lateral homogeneity.",

keywords = "Algaas/gaas quantum well, Epilayer, Photoluminescence, X-ray diffraction",

author = "Svitelskiy, {Alexey V.} and Semenova, {Galina N.} and Klad'ko, {Vasily P.} and Kryshtab, {Tatyana G.}",

note = "Publisher Copyright: {\textcopyright} 1995 SPIE.; International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1995 ; Conference date: 11-05-1995 Through 13-05-1995",

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month = nov,

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doi = "10.1117/12.226189",

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TY - JOUR

T1 - Photoluminescence and X-ray studies of thin layers down to single quantum wells

AU - Svitelskiy, Alexey V.

AU - Semenova, Galina N.

AU - Klad'ko, Vasily P.

AU - Kryshtab, Tatyana G.

PY - 1995/11/3

Y1 - 1995/11/3

N2 - We have demonstrated the capability and limitation of nondestructive photoluminescence and X-ray diffraction tecniques in the characterization of GaAs, AlGaAs, InGaAs matched epitaxial layers grown by molecular beam epitaxy as well as quantum wells grown by metalorganic chemical vapour deposition. The application of the X-ray diffraction and the photoluminescence methods to the same objects made it possible to control Al content in the AlxGa1-xAs layers in the range of x (0≤x≤l) and to solve some technological questions connected with layers lateral homogeneity.

AB - We have demonstrated the capability and limitation of nondestructive photoluminescence and X-ray diffraction tecniques in the characterization of GaAs, AlGaAs, InGaAs matched epitaxial layers grown by molecular beam epitaxy as well as quantum wells grown by metalorganic chemical vapour deposition. The application of the X-ray diffraction and the photoluminescence methods to the same objects made it possible to control Al content in the AlxGa1-xAs layers in the range of x (0≤x≤l) and to solve some technological questions connected with layers lateral homogeneity.

KW - Algaas/gaas quantum well

KW - Epilayer

KW - Photoluminescence

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0029459465&partnerID=8YFLogxK

U2 - 10.1117/12.226189

DO - 10.1117/12.226189

M3 - Artículo de la conferencia

AN - SCOPUS:0029459465

SN - 0277-786X

VL - 2648

SP - 325

EP - 332

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1995

Y2 - 11 May 1995 through 13 May 1995

ER -

Photoluminescence and X-ray studies of thin layers down to single quantum wells

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Keywords

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