TY - JOUR
T1 - Photoluminescence and surface structural investigations of low-dimensional silicon systems
AU - Aguilar-Hernandez, J.
AU - Torchynska, T. V.
AU - Becerril-Espinoza, G.
AU - Contreras-Puente, G.
AU - Palacios-Gomez, J.
AU - Delta-Torres, A.
AU - Goldstein, Y.
AU - Many, A.
AU - Jedrzejewski, J.
AU - Bulakh, B. M.
AU - Scherbina, L. V.
N1 - Funding Information:
This work was partially supported by Ministry of Sciences and Technology of Ukraine, Ministry of Science of Israel and CONACyT Mexico.
PY - 2001/11/15
Y1 - 2001/11/15
N2 - Comparative investigations of the "red" band photoluminescence (PL) peculiarities of the porous silicon (P-Si) and silicon in silicon oxide films were carried out. The photoluminescence (PL) mechanism of these systems was determined using PL and Raman scattering spectroscopies, as well as atomic force microscopy (AFM). Overall, significant results were obtained.
AB - Comparative investigations of the "red" band photoluminescence (PL) peculiarities of the porous silicon (P-Si) and silicon in silicon oxide films were carried out. The photoluminescence (PL) mechanism of these systems was determined using PL and Raman scattering spectroscopies, as well as atomic force microscopy (AFM). Overall, significant results were obtained.
UR - http://www.scopus.com/inward/record.url?scp=0035891968&partnerID=8YFLogxK
U2 - 10.1023/A:1013502411258
DO - 10.1023/A:1013502411258
M3 - Artículo
SN - 0261-8028
VL - 20
SP - 2061
EP - 2064
JO - Journal of Materials Science Letters
JF - Journal of Materials Science Letters
IS - 22
ER -