TY - GEN
T1 - Photoluminescence and In/Ga intermixture in InAs/InGaAs DWELL structures
AU - Vivas Hernandez, A.
AU - Guerrero Moreno, I. J.
AU - Velázquez Lozada, E.
PY - 2010
Y1 - 2010
N2 - The photoluminescence (PL) and photoluminescence temperature dependences have been studied in InAs quantum dots (QDs) embedded in the In 0.15Ga1-0.15As/GaAs quantum wells (QWs) with QDs grown at different temperatures (470-535 °C). Ground state (GS) related QD PL peaks shift into the red side with increasing QD growth temperature to 510 °C and the blue shift is observed when the temperature increased to 535 °C The temperature dependences of GS PL peak positions were fitted on the base of Varshni relation and the fitting parameters were compared with the bulk InAs and the In0.21Ga0.79As allow. This comparison has revealed that for QDs grown at 490-510 °C the PL fitting parameters are the same as for the bulk InAs crystal. The DWELL structures with QDs grown at other temperatures have fitting parameters different from the bulk InAs. Last fact testifies that in these structures the Ga/In inter-diffusion between QDs and a QW has been realized. This Ga/In intermixture can be stimulated not only by the high temperature (535 °C), but by the essential elastic stress as well in the DWELL structure with lower QD densities.
AB - The photoluminescence (PL) and photoluminescence temperature dependences have been studied in InAs quantum dots (QDs) embedded in the In 0.15Ga1-0.15As/GaAs quantum wells (QWs) with QDs grown at different temperatures (470-535 °C). Ground state (GS) related QD PL peaks shift into the red side with increasing QD growth temperature to 510 °C and the blue shift is observed when the temperature increased to 535 °C The temperature dependences of GS PL peak positions were fitted on the base of Varshni relation and the fitting parameters were compared with the bulk InAs and the In0.21Ga0.79As allow. This comparison has revealed that for QDs grown at 490-510 °C the PL fitting parameters are the same as for the bulk InAs crystal. The DWELL structures with QDs grown at other temperatures have fitting parameters different from the bulk InAs. Last fact testifies that in these structures the Ga/In inter-diffusion between QDs and a QW has been realized. This Ga/In intermixture can be stimulated not only by the high temperature (535 °C), but by the essential elastic stress as well in the DWELL structure with lower QD densities.
UR - http://www.scopus.com/inward/record.url?scp=80051514753&partnerID=8YFLogxK
M3 - Contribución a la conferencia
AN - SCOPUS:80051514753
SN - 9781605112190
T3 - Materials Research Society Symposium Proceedings
SP - 207
EP - 212
BT - Materials Characterization
T2 - 18th International Materials Research Congress 2009
Y2 - 16 August 2009 through 21 August 2009
ER -