Photoluminescence and EPR studies of porous silicon

T. V. Torchinskaya; N. P. Baran; N. E. Korsunskaya; B. R. Dzhumaev; L. Yu Khomenkova; M. K. Sheinkman

doi:10.1016/S0022-2313(96)00415-2

Photoluminescence and EPR studies of porous silicon

T. V. Torchinskaya, N. P. Baran, N. E. Korsunskaya, B. R. Dzhumaev, L. Yu Khomenkova, M. K. Sheinkman

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The dependence of the photoluminescence, photoluminescence excitation spectra as well as EPR and SIMS of porous silicon on the electrochemical etching regimes have been studied. We have shown that the change of the photoluminescence intensity under ultra violet excitation correlates with the variation of the silicon oxide quantity in the porous layer. At the same time the variation of the photoluminescence intensity under visible excitation anticorrelates with the H and SiH contents in the samples. The appearance of three EPR-centers connected with the silicon oxide surface centers in aging process has been observed.

Original language	English
Pages (from-to)	400-402
Number of pages	3
Journal	Journal of Luminescence
Volume	72-74
DOIs	https://doi.org/10.1016/S0022-2313(96)00415-2
State	Published - Jun 1997
Externally published	Yes

Keywords

Electron paramagnetic resonance
Photoluminescence
Photoluminescence excitation
Porous silicon

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10.1016/S0022-2313(96)00415-2

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@article{bcf980ef8c4b4fed832cd9d8d8097b2e,

title = "Photoluminescence and EPR studies of porous silicon",

abstract = "The dependence of the photoluminescence, photoluminescence excitation spectra as well as EPR and SIMS of porous silicon on the electrochemical etching regimes have been studied. We have shown that the change of the photoluminescence intensity under ultra violet excitation correlates with the variation of the silicon oxide quantity in the porous layer. At the same time the variation of the photoluminescence intensity under visible excitation anticorrelates with the H and SiH contents in the samples. The appearance of three EPR-centers connected with the silicon oxide surface centers in aging process has been observed.",

keywords = "Electron paramagnetic resonance, Photoluminescence, Photoluminescence excitation, Porous silicon",

author = "Torchinskaya, {T. V.} and Baran, {N. P.} and Korsunskaya, {N. E.} and Dzhumaev, {B. R.} and Khomenkova, {L. Yu} and Sheinkman, {M. K.}",

year = "1997",

month = jun,

doi = "10.1016/S0022-2313(96)00415-2",

language = "Ingl{\'e}s",

volume = "72-74",

pages = "400--402",

journal = "Journal of Luminescence",

issn = "0022-2313",

}

TY - JOUR

T1 - Photoluminescence and EPR studies of porous silicon

AU - Torchinskaya, T. V.

AU - Baran, N. P.

AU - Korsunskaya, N. E.

AU - Dzhumaev, B. R.

AU - Khomenkova, L. Yu

AU - Sheinkman, M. K.

PY - 1997/6

Y1 - 1997/6

N2 - The dependence of the photoluminescence, photoluminescence excitation spectra as well as EPR and SIMS of porous silicon on the electrochemical etching regimes have been studied. We have shown that the change of the photoluminescence intensity under ultra violet excitation correlates with the variation of the silicon oxide quantity in the porous layer. At the same time the variation of the photoluminescence intensity under visible excitation anticorrelates with the H and SiH contents in the samples. The appearance of three EPR-centers connected with the silicon oxide surface centers in aging process has been observed.

AB - The dependence of the photoluminescence, photoluminescence excitation spectra as well as EPR and SIMS of porous silicon on the electrochemical etching regimes have been studied. We have shown that the change of the photoluminescence intensity under ultra violet excitation correlates with the variation of the silicon oxide quantity in the porous layer. At the same time the variation of the photoluminescence intensity under visible excitation anticorrelates with the H and SiH contents in the samples. The appearance of three EPR-centers connected with the silicon oxide surface centers in aging process has been observed.

KW - Electron paramagnetic resonance

KW - Photoluminescence

KW - Photoluminescence excitation

KW - Porous silicon

UR - http://www.scopus.com/inward/record.url?scp=0031164390&partnerID=8YFLogxK

U2 - 10.1016/S0022-2313(96)00415-2

DO - 10.1016/S0022-2313(96)00415-2

M3 - Artículo

SN - 0022-2313

VL - 72-74

SP - 400

EP - 402

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Photoluminescence and EPR studies of porous silicon

Abstract

Keywords

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