TY - JOUR
T1 - Photoelectrochemical Performance of S,N-Codoped TiO2Films Supported on Ti and their Enhanced Photoelectrocatalytic Activity in the Generation of Hydroxyl Radicals
AU - Jaramillo-Gutiérrez, M. I.
AU - Acevedo-Peña, P.
AU - Reguera, E.
AU - Niño-Gómez, M. E.
AU - Pedraza-Avella, J. A.
N1 - Publisher Copyright:
© 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
PY - 2020/12/23
Y1 - 2020/12/23
N2 - New photoanodes for recalcitrant pollutant degradation should harvest photons from a wide region of the solar spectrum and promote a direct water oxidation reaction towards the hydroxyl radical generation. For this purpose, sulfur, nitrogen-codoped titanium dioxide (S,N-TiO2) films were prepared with different sulfur percentages (1.0, 2.5 and 5.0 at.%) on Ti expanded meshes by sol-gel dip-coating followed by thermal treatment at 400 C. The morphology, composition, oxidation states of dopants, structural features, optical and semiconducting properties of S,N-TiO2 were used for the materials characterization. While sulfur was found as S4+ or S6+ cations related to surface doping, nitrogen appears as N3- anion occupying substitutional positions in TiO2. This caused an improvement in the photoelectrochemical response of TiO2 related to a decrease of up to 0.25 eV in the optical band gap and the alignments of the TiO2 band structure. S,N-TiO2 films exhibit significantly higher photoelectrocatalytic activity towards •OH generation under UV-vis light irradiation than the undoped TiO2 films. Using 2.5 at.% S,N-TiO2 film, an increase of 166% in current efficiency was obtained at 0.5 V vs Ag/AgCl, in regard to undoped TiO2 films, together with an enhance of 8.8 times in the initial •OH generation rate.
AB - New photoanodes for recalcitrant pollutant degradation should harvest photons from a wide region of the solar spectrum and promote a direct water oxidation reaction towards the hydroxyl radical generation. For this purpose, sulfur, nitrogen-codoped titanium dioxide (S,N-TiO2) films were prepared with different sulfur percentages (1.0, 2.5 and 5.0 at.%) on Ti expanded meshes by sol-gel dip-coating followed by thermal treatment at 400 C. The morphology, composition, oxidation states of dopants, structural features, optical and semiconducting properties of S,N-TiO2 were used for the materials characterization. While sulfur was found as S4+ or S6+ cations related to surface doping, nitrogen appears as N3- anion occupying substitutional positions in TiO2. This caused an improvement in the photoelectrochemical response of TiO2 related to a decrease of up to 0.25 eV in the optical band gap and the alignments of the TiO2 band structure. S,N-TiO2 films exhibit significantly higher photoelectrocatalytic activity towards •OH generation under UV-vis light irradiation than the undoped TiO2 films. Using 2.5 at.% S,N-TiO2 film, an increase of 166% in current efficiency was obtained at 0.5 V vs Ag/AgCl, in regard to undoped TiO2 films, together with an enhance of 8.8 times in the initial •OH generation rate.
UR - http://www.scopus.com/inward/record.url?scp=85098959554&partnerID=8YFLogxK
U2 - 10.1149/1945-7111/abd283
DO - 10.1149/1945-7111/abd283
M3 - Artículo
AN - SCOPUS:85098959554
SN - 0013-4651
VL - 167
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 16
M1 - 166514
ER -
