TY - JOUR
T1 - Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure
AU - Saloma, E.
AU - Alcántara, S.
AU - Hernández-Como, N.
AU - Villanueva-Cab, J.
AU - Chavez, M.
AU - Pérez-Luna, G.
AU - Alvarado, J.
N1 - Publisher Copyright:
© 2020 The Author(s).
PY - 2020/10
Y1 - 2020/10
N2 - A SiO2 of 200 nm thickness layer was grown via thermal oxidation to obtain an Al/SiO2/p-Si MIS Schottky diode structure with top contacts and different active areas. Electrical measurements of MIS Schottky diode structure allow to observe the photoelectric effect only in the device with higher active area, as well as to obtain some electrical parameters such as the barrier height, the ideality factor and the density of interface states, which correspond to 0.97 eV, 1.46 and 4.44 × 1010 eV-1 cm-2 respectively. Furthermore, a fill factor of 0.202 and power conversion efficiency less than 1%. On the other hand, Capacitance-Voltage (C–V) measurements depict a positive and negative capacitance peaks at low frequencies; this behavior and photoelectric effect are attributed to the density of interface states at SiO2/p-Si, as well as to the Space-Charge-Limited Conduction process in the insulation layer. Furthermore, the use of this kind of insulator can allows increasing the conversion efficiency if it is used as bottom n-layer or front contact in tandem solar cells and silicon heterojunction solar cells, respectively.
AB - A SiO2 of 200 nm thickness layer was grown via thermal oxidation to obtain an Al/SiO2/p-Si MIS Schottky diode structure with top contacts and different active areas. Electrical measurements of MIS Schottky diode structure allow to observe the photoelectric effect only in the device with higher active area, as well as to obtain some electrical parameters such as the barrier height, the ideality factor and the density of interface states, which correspond to 0.97 eV, 1.46 and 4.44 × 1010 eV-1 cm-2 respectively. Furthermore, a fill factor of 0.202 and power conversion efficiency less than 1%. On the other hand, Capacitance-Voltage (C–V) measurements depict a positive and negative capacitance peaks at low frequencies; this behavior and photoelectric effect are attributed to the density of interface states at SiO2/p-Si, as well as to the Space-Charge-Limited Conduction process in the insulation layer. Furthermore, the use of this kind of insulator can allows increasing the conversion efficiency if it is used as bottom n-layer or front contact in tandem solar cells and silicon heterojunction solar cells, respectively.
KW - MIS schottky diode
KW - Photoelectric effect
KW - Silicon photoelectric cell
UR - http://www.scopus.com/inward/record.url?scp=85093068169&partnerID=8YFLogxK
U2 - 10.1088/2053-1591/abbc40
DO - 10.1088/2053-1591/abbc40
M3 - Artículo
AN - SCOPUS:85093068169
SN - 2053-1591
VL - 7
JO - Materials Research Express
JF - Materials Research Express
IS - 10
M1 - 105902
ER -