Photodetectors on base of AlGaAs/GaAs heterostructures grown by liquid phase epitaxy using rare-earth additions

E. F. Venger; G. N. Semenova; T. G. Kryshtab; A. V. Svitelskiy; P. M. Lytvyn; S. I. Krukovskii

Photodetectors on base of AlGaAs/GaAs heterostructures grown by liquid phase epitaxy using rare-earth additions

E. F. Venger, G. N. Semenova, T. G. Kryshtab, A. V. Svitelskiy, P. M. Lytvyn, S. I. Krukovskii

Research output: Contribution to conference › Paper › peer-review

Abstract

The Al_xGa_1-xAs/GaAs heterostructures represent a potentially useful material for photodetectors with high efficiency in spectral range 0.4-0.9 μm. To produce the thermostable detectors with high radiation hardness on the base of liquid phase epitaxy (LPE) the physical and chemical foundation of such epilayers formation was developed. The abilities of LPE method were improved due to utilization of multicomponent solution-melts with rare-earth additions. The horizontal sliding-boat step-cooled LPE technique with controlled composition of gaseous medium and additions of Yb in Bi and Ga-Bi-Al solution-melts was used as the base of technology. As a result of our investigation the quickly responsive photodiodes with improved technical, exploitative and economical parameters were produced.

Original language	English
Pages	607-610
Number of pages	4
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom Duration: 9 Oct 1996 → 12 Oct 1996

Conference

Conference	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)
City	Sinaia, Rom
Period	9/10/96 → 12/10/96

Cite this

@conference{0c6de636aac04dc79fb833360835997c,

title = "Photodetectors on base of AlGaAs/GaAs heterostructures grown by liquid phase epitaxy using rare-earth additions",

abstract = "The AlxGa1-xAs/GaAs heterostructures represent a potentially useful material for photodetectors with high efficiency in spectral range 0.4-0.9 μm. To produce the thermostable detectors with high radiation hardness on the base of liquid phase epitaxy (LPE) the physical and chemical foundation of such epilayers formation was developed. The abilities of LPE method were improved due to utilization of multicomponent solution-melts with rare-earth additions. The horizontal sliding-boat step-cooled LPE technique with controlled composition of gaseous medium and additions of Yb in Bi and Ga-Bi-Al solution-melts was used as the base of technology. As a result of our investigation the quickly responsive photodiodes with improved technical, exploitative and economical parameters were produced.",

author = "Venger, {E. F.} and Semenova, {G. N.} and Kryshtab, {T. G.} and Svitelskiy, {A. V.} and Lytvyn, {P. M.} and Krukovskii, {S. I.}",

year = "1996",

language = "Ingl{\'e}s",

pages = "607--610",

note = "Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) ; Conference date: 09-10-1996 Through 12-10-1996",

}

TY - CONF

T1 - Photodetectors on base of AlGaAs/GaAs heterostructures grown by liquid phase epitaxy using rare-earth additions

AU - Venger, E. F.

AU - Semenova, G. N.

AU - Kryshtab, T. G.

AU - Svitelskiy, A. V.

AU - Lytvyn, P. M.

AU - Krukovskii, S. I.

PY - 1996

Y1 - 1996

N2 - The AlxGa1-xAs/GaAs heterostructures represent a potentially useful material for photodetectors with high efficiency in spectral range 0.4-0.9 μm. To produce the thermostable detectors with high radiation hardness on the base of liquid phase epitaxy (LPE) the physical and chemical foundation of such epilayers formation was developed. The abilities of LPE method were improved due to utilization of multicomponent solution-melts with rare-earth additions. The horizontal sliding-boat step-cooled LPE technique with controlled composition of gaseous medium and additions of Yb in Bi and Ga-Bi-Al solution-melts was used as the base of technology. As a result of our investigation the quickly responsive photodiodes with improved technical, exploitative and economical parameters were produced.

AB - The AlxGa1-xAs/GaAs heterostructures represent a potentially useful material for photodetectors with high efficiency in spectral range 0.4-0.9 μm. To produce the thermostable detectors with high radiation hardness on the base of liquid phase epitaxy (LPE) the physical and chemical foundation of such epilayers formation was developed. The abilities of LPE method were improved due to utilization of multicomponent solution-melts with rare-earth additions. The horizontal sliding-boat step-cooled LPE technique with controlled composition of gaseous medium and additions of Yb in Bi and Ga-Bi-Al solution-melts was used as the base of technology. As a result of our investigation the quickly responsive photodiodes with improved technical, exploitative and economical parameters were produced.

UR - http://www.scopus.com/inward/record.url?scp=0030411748&partnerID=8YFLogxK

M3 - Artículo

SP - 607

EP - 610

T2 - Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)

Y2 - 9 October 1996 through 12 October 1996

ER -

Photodetectors on base of AlGaAs/GaAs heterostructures grown by liquid phase epitaxy using rare-earth additions

Abstract

Conference

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