TY - GEN
T1 - PHONON SOFTENING IN ULTRA HEAVILY DOPED Si AND Ge.
AU - Compaan, A.
AU - Contreras, G.
AU - Cardona, M.
AU - Axmann, A.
PY - 1983
Y1 - 1983
N2 - Multiple pulse annealing with a XeCl laser (308 nm, 10 nsec, about 0. 8J/cm**2) has been used to produce flat concentration profiles following heavy implantations of Ga, B, P, and As at energies up to 350 kev. The influence of the free carrier concentration on the zone center phonon frequency has been studied by Raman scattering with violet and ultra-violet cw laser lines to ensure that only the implanted region was sampled. We find a softening of the zone center optic mode in Si:As (N//e approximately equals 3 multiplied by 10**2**1 cm** minus **3) of about 10 cm** minus **1 and for Si:B (N//p approximately equals 1 multiplied by 10**2**1 cm** minus **3) a softening of about 20 cm** minus **1.
AB - Multiple pulse annealing with a XeCl laser (308 nm, 10 nsec, about 0. 8J/cm**2) has been used to produce flat concentration profiles following heavy implantations of Ga, B, P, and As at energies up to 350 kev. The influence of the free carrier concentration on the zone center phonon frequency has been studied by Raman scattering with violet and ultra-violet cw laser lines to ensure that only the implanted region was sampled. We find a softening of the zone center optic mode in Si:As (N//e approximately equals 3 multiplied by 10**2**1 cm** minus **3) of about 10 cm** minus **1 and for Si:B (N//p approximately equals 1 multiplied by 10**2**1 cm** minus **3) a softening of about 20 cm** minus **1.
UR - http://www.scopus.com/inward/record.url?scp=0020831035&partnerID=8YFLogxK
U2 - 10.1051/jphyscol:1983531
DO - 10.1051/jphyscol:1983531
M3 - Contribución a la conferencia
AN - SCOPUS:0020831035
SN - 2902731620
SN - 9782902731626
T3 - Journal de Physique (Paris), Colloque
SP - 197
EP - 201
BT - Journal de Physique (Paris), Colloque
ER -