Abstract
The polarity effects of InSb(111) substrates on the heteroepitaxial growth of CdTe are demonstrated. It is observed that the formation of the wurtzite phase accompanied with polycrystalline regions is nearly 2D. It is shown that In-Te compounds are favorable to be formed at the interface of CdTe on InSb(111), with a higher density on the A surface. The strains generated by these interfacial compounds explain the presence of the wurtzite phase on the (111)A substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 1716-1719 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 18 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2000 |
| Externally published | Yes |