@inproceedings{2a36a9de623049e1976b135a1b3fe403,
title = "Optical properties and HR-XRD of InGaAs/AlGaAs/GaAs structures with InAs quantum dots and different capping layers",
abstract = "The Al0.30Ga0.70As /InGaAs/AlGaInAs/ Al0.30Ga0.70As structures with embedded InAs quantum dots (QDs) covered by strain reduced AlGaInAs capping layers have been investigated in an as-grown state using the photoluminescence (PL) and high resolution X ray diffraction (HR-XRD) methods. Two types of QD structures with different quantum well (QW) capping layers: Al0.10In0.15Ga0.75As (#1) and Al0.40In0.15Ga0.45As (#2), and buffer QW layers: In0.15Ga0.85As (#1) and In0.25Ga0.75As (#2) are compared. It is revealed that QD emission in the structure with Al0.10In0.15Ga0.75As capping (#1) is characterized by the higher PL intensity of the ground state (GS) band and smaller the full with at half maximum (FWHM), compared to those in #2. The variation of the GS emission intensity versus temperature has been monitored within the range of 10-500K. It was revealed more significant PL thermal quenching in #1 compared with #2. HR-XRD study has shown that the both QD structures are characterized by the best quality of the QW interfaces with the high numbers of Pendell{\"o}sung peaks. The analysis of HR-XRD scans permits to estimate the values of the elastic strains in the studied QD structures, which were higher in #2 compared with #1. The peculiarities of PL spectra and HR-XRD are analyzed and the advances of studied QD structures have been compared and discussed.",
author = "Georgiy Polupan and Ricardo Cisneros-Tamayo and Tetyana Torchynska",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 ; Conference date: 30-05-2021 Through 03-06-2021",
year = "2021",
doi = "10.1149/10203.0113ecst",
language = "Ingl{\'e}s",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "3",
pages = "113--119",
editor = "V. Chakrapani and Hite, {J. K.} and J. Zavada and T. Anderson and M. Tadjer and Kilgore, {S. H.}",
booktitle = "239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - Wide Bandgap Semiconductor Materials and Devices 22",
address = "Reino Unido",
edition = "3",
}