Optical investigation of Si nano-crystals in amorphous silicon matrix

A. Vivas Hernandez; T. V. Torchynska; Y. Matsumoto; S. Jimenez Sandoval; M. Dybiec; S. Ostapenko; L. V. Shcherbina

doi:10.1016/j.mejo.2005.02.065

Optical investigation of Si nano-crystals in amorphous silicon matrix

A. Vivas Hernandez, T. V. Torchynska, Y. Matsumoto, S. Jimenez Sandoval, M. Dybiec, S. Ostapenko, L. V. Shcherbina

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to the band tail luminescence in Si nano crystallites with the size of 15-20 nm. Concurrently, the 1.18 and 1.36 eV PL bands are connected, apparently, with radiative transition between quantum confined levels within Si QDs (size of 5-6 nm) embedded into a-Si matrix.

Translated title of the contribution	Investigación óptica de nanocristales de Si en matriz de silicio amorfo
Original language	English
Pages (from-to)	510-513
Number of pages	4
Journal	Microelectronics Journal
Volume	36
Issue number	3-6
DOIs	https://doi.org/10.1016/j.mejo.2005.02.065
State	Published - Mar 2005

Keywords

Amorphous Si
Band tail luminescence
Si QD luminescence

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10.1016/j.mejo.2005.02.065

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@article{15e247dd6e184143be8eaeb85cc9d3a2,

title = "Optical investigation of Si nano-crystals in amorphous silicon matrix",

abstract = "Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to the band tail luminescence in Si nano crystallites with the size of 15-20 nm. Concurrently, the 1.18 and 1.36 eV PL bands are connected, apparently, with radiative transition between quantum confined levels within Si QDs (size of 5-6 nm) embedded into a-Si matrix.",

keywords = "Amorphous Si, Band tail luminescence, Si QD luminescence",

author = "Hernandez, {A. Vivas} and Torchynska, {T. V.} and Y. Matsumoto and Sandoval, {S. Jimenez} and M. Dybiec and S. Ostapenko and Shcherbina, {L. V.}",

note = "Funding Information: This work was partially supported by CONACYT Mexico–USA cooperation program as well as by SGPI-IPN, Mexico.",

year = "2005",

month = mar,

doi = "10.1016/j.mejo.2005.02.065",

language = "Ingl{\'e}s",

volume = "36",

pages = "510--513",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

number = "3-6",

}

TY - JOUR

T1 - Optical investigation of Si nano-crystals in amorphous silicon matrix

AU - Hernandez, A. Vivas

AU - Torchynska, T. V.

AU - Matsumoto, Y.

AU - Sandoval, S. Jimenez

AU - Dybiec, M.

AU - Ostapenko, S.

AU - Shcherbina, L. V.

N1 - Funding Information: This work was partially supported by CONACYT Mexico–USA cooperation program as well as by SGPI-IPN, Mexico.

PY - 2005/3

Y1 - 2005/3

N2 - Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to the band tail luminescence in Si nano crystallites with the size of 15-20 nm. Concurrently, the 1.18 and 1.36 eV PL bands are connected, apparently, with radiative transition between quantum confined levels within Si QDs (size of 5-6 nm) embedded into a-Si matrix.

AB - Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to the band tail luminescence in Si nano crystallites with the size of 15-20 nm. Concurrently, the 1.18 and 1.36 eV PL bands are connected, apparently, with radiative transition between quantum confined levels within Si QDs (size of 5-6 nm) embedded into a-Si matrix.

KW - Amorphous Si

KW - Band tail luminescence

KW - Si QD luminescence

UR - http://www.scopus.com/inward/record.url?scp=33644501131&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.02.065

DO - 10.1016/j.mejo.2005.02.065

M3 - Artículo de la conferencia

AN - SCOPUS:33644501131

SN - 0026-2692

VL - 36

SP - 510

EP - 513

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-6

ER -

Optical investigation of Si nano-crystals in amorphous silicon matrix

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Keywords

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