Optical characterization of crystalline silicon embedded in a-Si matrix

T. V. Torchynska; A. Vivas Hernandez; M. Dybiec; Yu Emirov; I. Tarasov; S. Ostapenko; Yasuhiro Matsumoto

doi:10.1002/pssc.200460552

Optical characterization of crystalline silicon embedded in a-Si matrix

T. V. Torchynska, A. Vivas Hernandez, M. Dybiec, Yu Emirov, I. Tarasov, S. Ostapenko, Yasuhiro Matsumoto

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The photoluminescence of pure amorphous Si films and films with embedded Si quantum dots and large nano-crystallites is correlated with XRD and AFM measurements. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.18 and 1.39 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to band tail luminescence in Si nano-crystallites. Concurrently, the 1.18 and 1.39 eV PL bands are assigned to radiative transitions between quantum confined levels within Si quantum dots embedded into a-Si matrix.

Translated title of the contribution	Caracterización óptica de silicio cristalino embebido en matriz de a-Si
Original language	English
Pages (from-to)	1832-1836
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200460552
State	Published - 2005

Access to Document

10.1002/pssc.200460552

Cite this

@article{d409b5aa91814b4886becebd63fb1809,

title = "Optical characterization of crystalline silicon embedded in a-Si matrix",

abstract = "The photoluminescence of pure amorphous Si films and films with embedded Si quantum dots and large nano-crystallites is correlated with XRD and AFM measurements. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.18 and 1.39 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to band tail luminescence in Si nano-crystallites. Concurrently, the 1.18 and 1.39 eV PL bands are assigned to radiative transitions between quantum confined levels within Si quantum dots embedded into a-Si matrix.",

author = "Torchynska, {T. V.} and {Vivas Hernandez}, A. and M. Dybiec and Yu Emirov and I. Tarasov and S. Ostapenko and Yasuhiro Matsumoto",

year = "2005",

doi = "10.1002/pssc.200460552",

language = "Ingl{\'e}s",

volume = "2",

pages = "1832--1836",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "6",

}

TY - JOUR

T1 - Optical characterization of crystalline silicon embedded in a-Si matrix

AU - Torchynska, T. V.

AU - Vivas Hernandez, A.

AU - Dybiec, M.

AU - Emirov, Yu

AU - Tarasov, I.

AU - Ostapenko, S.

AU - Matsumoto, Yasuhiro

PY - 2005

Y1 - 2005

N2 - The photoluminescence of pure amorphous Si films and films with embedded Si quantum dots and large nano-crystallites is correlated with XRD and AFM measurements. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.18 and 1.39 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to band tail luminescence in Si nano-crystallites. Concurrently, the 1.18 and 1.39 eV PL bands are assigned to radiative transitions between quantum confined levels within Si quantum dots embedded into a-Si matrix.

AB - The photoluminescence of pure amorphous Si films and films with embedded Si quantum dots and large nano-crystallites is correlated with XRD and AFM measurements. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.18 and 1.39 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to band tail luminescence in Si nano-crystallites. Concurrently, the 1.18 and 1.39 eV PL bands are assigned to radiative transitions between quantum confined levels within Si quantum dots embedded into a-Si matrix.

UR - http://www.scopus.com/inward/record.url?scp=27344435582&partnerID=8YFLogxK

U2 - 10.1002/pssc.200460552

DO - 10.1002/pssc.200460552

M3 - Artículo

AN - SCOPUS:27344435582

SN - 1610-1634

VL - 2

SP - 1832

EP - 1836

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 6

ER -

Optical characterization of crystalline silicon embedded in a-Si matrix

Abstract

Access to Document

Other files and links

Fingerprint

Cite this