Optical characterization of a strained silicon quantum well on SiGe on insulator

J. Munguía; G. Bremond; O. Marty; J. M. Bluet; M. Mermoux

doi:10.1063/1.2787964

Optical characterization of a strained silicon quantum well on SiGe on insulator

J. Munguía, G. Bremond, O. Marty, J. M. Bluet, M. Mermoux

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

An 8 nm thick strained silicon layer embedded in relaxed Si0.8 Ge0.2 has been grown on SiGe on insulator substrate in order to reduce the optical response of dislocations present in the SiGe virtual substrate. Photoreflectance measurement shows bandgap shrinkage at point of 0.19 eV which corresponds to a 0.94% strain value close to the one measured in Raman spectroscopy. The luminescence arising only from the strained Si quantum well in high injection conditions reveals clearly two optical transitions observed at 0.959 and 1.016 eV.

Original language	English
Article number	122108
Journal	Applied Physics Letters
Volume	91
Issue number	12
DOIs	https://doi.org/10.1063/1.2787964
State	Published - 2007
Externally published	Yes

Access to Document

10.1063/1.2787964

Cite this

@article{0f97712da70a4d758c2e31caa13efd5b,

title = "Optical characterization of a strained silicon quantum well on SiGe on insulator",

abstract = "An 8 nm thick strained silicon layer embedded in relaxed Si0.8 Ge0.2 has been grown on SiGe on insulator substrate in order to reduce the optical response of dislocations present in the SiGe virtual substrate. Photoreflectance measurement shows bandgap shrinkage at point of 0.19 eV which corresponds to a 0.94% strain value close to the one measured in Raman spectroscopy. The luminescence arising only from the strained Si quantum well in high injection conditions reveals clearly two optical transitions observed at 0.959 and 1.016 eV.",

author = "J. Mungu{\'i}a and G. Bremond and O. Marty and Bluet, {J. M.} and M. Mermoux",

note = "Funding Information: This work was partially supported by CONACYT grant program and the MEDEA 2T 101 in the frame of the CEA-LETI/INL collaboration. The authors thank SOITEC for sample preparation and J. M. Hartmann from LETI for the SiGe epitaxy.",

year = "2007",

doi = "10.1063/1.2787964",

language = "Ingl{\'e}s",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "12",

}

TY - JOUR

T1 - Optical characterization of a strained silicon quantum well on SiGe on insulator

AU - Munguía, J.

AU - Bremond, G.

AU - Marty, O.

AU - Bluet, J. M.

AU - Mermoux, M.

N1 - Funding Information: This work was partially supported by CONACYT grant program and the MEDEA 2T 101 in the frame of the CEA-LETI/INL collaboration. The authors thank SOITEC for sample preparation and J. M. Hartmann from LETI for the SiGe epitaxy.

PY - 2007

Y1 - 2007

N2 - An 8 nm thick strained silicon layer embedded in relaxed Si0.8 Ge0.2 has been grown on SiGe on insulator substrate in order to reduce the optical response of dislocations present in the SiGe virtual substrate. Photoreflectance measurement shows bandgap shrinkage at point of 0.19 eV which corresponds to a 0.94% strain value close to the one measured in Raman spectroscopy. The luminescence arising only from the strained Si quantum well in high injection conditions reveals clearly two optical transitions observed at 0.959 and 1.016 eV.

AB - An 8 nm thick strained silicon layer embedded in relaxed Si0.8 Ge0.2 has been grown on SiGe on insulator substrate in order to reduce the optical response of dislocations present in the SiGe virtual substrate. Photoreflectance measurement shows bandgap shrinkage at point of 0.19 eV which corresponds to a 0.94% strain value close to the one measured in Raman spectroscopy. The luminescence arising only from the strained Si quantum well in high injection conditions reveals clearly two optical transitions observed at 0.959 and 1.016 eV.

UR - http://www.scopus.com/inward/record.url?scp=34648829941&partnerID=8YFLogxK

U2 - 10.1063/1.2787964

DO - 10.1063/1.2787964

M3 - Artículo

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122108

ER -

Optical characterization of a strained silicon quantum well on SiGe on insulator

Abstract

Access to Document

Other files and links

Fingerprint

Cite this