Optical and structural investigations of GeSiO2 systems

T. V. Torchynska; J. Aguilar-Hernandez; G. Polupan; A. Kolobov

Optical and structural investigations of GeSiO₂ systems

T. V. Torchynska, J. Aguilar-Hernandez, G. Polupan, A. Kolobov

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper presents the results of a photoluminescence investigation of silicon oxide films enriched by Ge. Photoluminescence peculiarities are analyzed both for "as prepared" silicon oxide films enriched by Ge (without Ge-nanocrystalls) and for films with Ge-nc, created during film annealing in inert atmosphere at 800°C. Raman scattering spectra and high-resolution transmission electronic microscopy are used for the confirmation the Ge-nc plane existing in the structures, and for an estimation of their sizes. The mechanism of photoluminescence is discussed as well.

Translated title of the contribution	Investigaciones ópticas y estructurales de sistemas GeSiO 2
Original language	English
Pages (from-to)	65-67
Number of pages	3
Journal	Institute of Physics Conference Series
Volume	174
State	Published - 2003
Event	Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland Duration: 7 Oct 2002 → 10 Oct 2002

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title = "Optical and structural investigations of GeSiO2 systems",

abstract = "This paper presents the results of a photoluminescence investigation of silicon oxide films enriched by Ge. Photoluminescence peculiarities are analyzed both for {"}as prepared{"} silicon oxide films enriched by Ge (without Ge-nanocrystalls) and for films with Ge-nc, created during film annealing in inert atmosphere at 800°C. Raman scattering spectra and high-resolution transmission electronic microscopy are used for the confirmation the Ge-nc plane existing in the structures, and for an estimation of their sizes. The mechanism of photoluminescence is discussed as well.",

keywords = "recocido, tratamiento t{\'e}rmico, pulverizaci{\'o}n cat{\'o}dica magnetr{\'o}nica, materiales nanoestructurados, Dispositivos optoelectr{\'o}nicos, fotoluminiscencia, dispersi{\'o}n Raman, Puntos cu{\'a}nticos semiconductores, compuestos de silicio, pel{\'i}culas delgadas, Microscopio de transmisi{\'o}n por electrones, Ancho total con medio m{\'a}ximo (FWHM), transici{\'o}n {\'o}ptica, {\'o}xido de silicio, Compuestos de germanio semiconductores",

author = "Torchynska, {T. V.} and J. Aguilar-Hernandez and G. Polupan and A. Kolobov",

year = "2003",

language = "Ingl{\'e}s",

volume = "174",

pages = "65--67",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors ; Conference date: 07-10-2002 Through 10-10-2002",

}

TY - JOUR

T1 - Optical and structural investigations of GeSiO2 systems

AU - Torchynska, T. V.

AU - Aguilar-Hernandez, J.

AU - Polupan, G.

AU - Kolobov, A.

PY - 2003

Y1 - 2003

N2 - This paper presents the results of a photoluminescence investigation of silicon oxide films enriched by Ge. Photoluminescence peculiarities are analyzed both for "as prepared" silicon oxide films enriched by Ge (without Ge-nanocrystalls) and for films with Ge-nc, created during film annealing in inert atmosphere at 800°C. Raman scattering spectra and high-resolution transmission electronic microscopy are used for the confirmation the Ge-nc plane existing in the structures, and for an estimation of their sizes. The mechanism of photoluminescence is discussed as well.

AB - This paper presents the results of a photoluminescence investigation of silicon oxide films enriched by Ge. Photoluminescence peculiarities are analyzed both for "as prepared" silicon oxide films enriched by Ge (without Ge-nanocrystalls) and for films with Ge-nc, created during film annealing in inert atmosphere at 800°C. Raman scattering spectra and high-resolution transmission electronic microscopy are used for the confirmation the Ge-nc plane existing in the structures, and for an estimation of their sizes. The mechanism of photoluminescence is discussed as well.

KW - recocido

KW - tratamiento térmico

KW - pulverización catódica magnetrónica

KW - materiales nanoestructurados

KW - Dispositivos optoelectrónicos

KW - fotoluminiscencia

KW - dispersión Raman

KW - Puntos cuánticos semiconductores

KW - compuestos de silicio

KW - películas delgadas

KW - Microscopio de transmisión por electrones

KW - Ancho total con medio máximo (FWHM)

KW - transición óptica

KW - óxido de silicio

KW - Compuestos de germanio semiconductores

UR - http://www.scopus.com/inward/record.url?scp=10444224666&partnerID=8YFLogxK

M3 - Artículo de la conferencia

AN - SCOPUS:10444224666

SN - 0951-3248

VL - 174

SP - 65

EP - 67

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors

Y2 - 7 October 2002 through 10 October 2002

ER -

Optical and structural investigations of GeSiO₂ systems

Abstract

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