Optical and morphological properties of SiN x/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

G. Santana; O. De Melo; J. Aguilar- Hernández; B. M. Monroy; J. Fandiño; F. Cruz; A. Ortiz; G. Contreras-Puentes; J. C. Alonso

doi:10.1002/pssc.200461748

Optical and morphological properties of SiN _x/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

G. Santana, O. De Melo, J. Aguilar- Hernández, B. M. Monroy, J. Fandiño, F. Cruz, A. Ortiz, G. Contreras-Puentes, J. C. Alonso

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Very thin layers of Si were grown in between silicon nitride layers using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and SiH ₂Cl ₂/H ₂/NH ₃ mixtures. Deposition conditions were selected to favor Si cluster formation. Room Temperature Photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical and structural properties of the films. Scanning Electron Microscopy (SEM) of the cross section of cleaved samples allowed to observe a clear pattern of Si clusters embedded in the SiN matrix. The UV-VIS absorption spectra present two band edges. We assume that the higher band gap is due to the amorphous Si clusters. RT-PL spectra are characterized by two broad bands: one centered at 1.5 eV and the other at 2.1 eV. The broad luminescence centered at 2.1 eV could be associated with the higher band gap observed in absorption spectrum. After vacuum annealing of the samples at 400°C, the band at 2.1 eV disappears.

Translated title of the contribution	Propiedades ópticas y morfológicas de estructuras multicapa amorfas de SiN x /Si cultivadas mediante deposición química de vapor mejorada con plasma
Original language	English
Pages (from-to)	3698-3701
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200461748
State	Published - 2005

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Santana, G., De Melo, O., Aguilar- Hernández, J., Monroy, B. M., Fandiño, J., Cruz, F., Ortiz, A., Contreras-Puentes, G., & Alonso, J. C. (2005). Optical and morphological properties of SiN _x/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition. Physica Status Solidi C: Conferences, 2(10), 3698-3701. https://doi.org/10.1002/pssc.200461748

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title = "Optical and morphological properties of SiN x/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition",

abstract = "Very thin layers of Si were grown in between silicon nitride layers using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and SiH 2Cl 2/H 2/NH 3 mixtures. Deposition conditions were selected to favor Si cluster formation. Room Temperature Photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical and structural properties of the films. Scanning Electron Microscopy (SEM) of the cross section of cleaved samples allowed to observe a clear pattern of Si clusters embedded in the SiN matrix. The UV-VIS absorption spectra present two band edges. We assume that the higher band gap is due to the amorphous Si clusters. RT-PL spectra are characterized by two broad bands: one centered at 1.5 eV and the other at 2.1 eV. The broad luminescence centered at 2.1 eV could be associated with the higher band gap observed in absorption spectrum. After vacuum annealing of the samples at 400°C, the band at 2.1 eV disappears.",

author = "G. Santana and {De Melo}, O. and {Aguilar- Hern{\'a}ndez}, J. and Monroy, {B. M.} and J. Fandi{\~n}o and F. Cruz and A. Ortiz and G. Contreras-Puentes and Alonso, {J. C.}",

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Santana, G, De Melo, O, Aguilar- Hernández, J, Monroy, BM, Fandiño, J, Cruz, F, Ortiz, A, Contreras-Puentes, G & Alonso, JC 2005, 'Optical and morphological properties of SiN _x/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition', Physica Status Solidi C: Conferences, vol. 2, no. 10, pp. 3698-3701. https://doi.org/10.1002/pssc.200461748

TY - JOUR

T1 - Optical and morphological properties of SiN x/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

AU - Santana, G.

AU - De Melo, O.

AU - Aguilar- Hernández, J.

AU - Monroy, B. M.

AU - Fandiño, J.

AU - Cruz, F.

AU - Ortiz, A.

AU - Contreras-Puentes, G.

AU - Alonso, J. C.

PY - 2005

Y1 - 2005

N2 - Very thin layers of Si were grown in between silicon nitride layers using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and SiH 2Cl 2/H 2/NH 3 mixtures. Deposition conditions were selected to favor Si cluster formation. Room Temperature Photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical and structural properties of the films. Scanning Electron Microscopy (SEM) of the cross section of cleaved samples allowed to observe a clear pattern of Si clusters embedded in the SiN matrix. The UV-VIS absorption spectra present two band edges. We assume that the higher band gap is due to the amorphous Si clusters. RT-PL spectra are characterized by two broad bands: one centered at 1.5 eV and the other at 2.1 eV. The broad luminescence centered at 2.1 eV could be associated with the higher band gap observed in absorption spectrum. After vacuum annealing of the samples at 400°C, the band at 2.1 eV disappears.

AB - Very thin layers of Si were grown in between silicon nitride layers using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and SiH 2Cl 2/H 2/NH 3 mixtures. Deposition conditions were selected to favor Si cluster formation. Room Temperature Photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical and structural properties of the films. Scanning Electron Microscopy (SEM) of the cross section of cleaved samples allowed to observe a clear pattern of Si clusters embedded in the SiN matrix. The UV-VIS absorption spectra present two band edges. We assume that the higher band gap is due to the amorphous Si clusters. RT-PL spectra are characterized by two broad bands: one centered at 1.5 eV and the other at 2.1 eV. The broad luminescence centered at 2.1 eV could be associated with the higher band gap observed in absorption spectrum. After vacuum annealing of the samples at 400°C, the band at 2.1 eV disappears.

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JO - Physica Status Solidi C: Conferences

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ER -

Optical and morphological properties of SiN _x/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

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